JPS63136675A - ダイヤフラム式半導体圧力センサ−の製造方法 - Google Patents

Info

Publication number

JPS63136675A

JPS63136675A JP28361686A JP28361686A JPS63136675A JP S63136675 A JPS63136675 A JP S63136675A JP 28361686 A JP28361686 A JP 28361686A JP 28361686 A JP28361686 A JP 28361686A JP S63136675 A JPS63136675 A JP S63136675A

Authority

JP

Japan

Prior art keywords

etching

acid

pressure sensor

diaphragm

etching solution

Prior art date

1986-11-28

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

Links

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• 239000004065 semiconductor Substances 0.000 title claims abstract description 27
• 238000004519 manufacturing process Methods 0.000 title claims description 9
• 238000005530 etching Methods 0.000 claims abstract description 68
• 239000000758 substrate Substances 0.000 claims abstract description 21
• 239000002253 acid Substances 0.000 claims abstract description 13
• 238000003486 chemical etching Methods 0.000 claims abstract description 7
• GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract 3
• 229910017604 nitric acid Inorganic materials 0.000 claims abstract 3
• 229910052710 silicon Inorganic materials 0.000 claims description 13
• 239000010703 silicon Substances 0.000 claims description 13
• 238000000034 method Methods 0.000 claims description 11
• KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
• QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 abstract description 8
• QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 abstract description 3
• 239000000126 substance Substances 0.000 abstract description 3
• 230000001681 protective effect Effects 0.000 abstract description 2
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
• 229910003556 H2 SO4 Inorganic materials 0.000 abstract 1
• 229910052681 coesite Inorganic materials 0.000 abstract 1
• 150000001875 compounds Chemical class 0.000 abstract 1
• 229910052906 cristobalite Inorganic materials 0.000 abstract 1
• 230000003247 decreasing effect Effects 0.000 abstract 1
• QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 abstract 1
• 239000000377 silicon dioxide Substances 0.000 abstract 1
• 235000012239 silicon dioxide Nutrition 0.000 abstract 1
• 229910052682 stishovite Inorganic materials 0.000 abstract 1
• 239000001117 sulphuric acid Substances 0.000 abstract 1
• 235000011149 sulphuric acid Nutrition 0.000 abstract 1
• 229910052905 tridymite Inorganic materials 0.000 abstract 1
• 210000000188 diaphragm Anatomy 0.000 description 33
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
• 239000007788 liquid Substances 0.000 description 4
• 230000000694 effects Effects 0.000 description 3
• 230000002093 peripheral effect Effects 0.000 description 3
• 230000015572 biosynthetic process Effects 0.000 description 2
• 238000009792 diffusion process Methods 0.000 description 2
• 239000012535 impurity Substances 0.000 description 2
• 239000012528 membrane Substances 0.000 description 2
• 238000010586 diagram Methods 0.000 description 1
• 230000001788 irregular Effects 0.000 description 1
• 238000003756 stirring Methods 0.000 description 1

Cited By (2)