JPS63133619A - 化合物半導体の液相エピタキシヤル成長法 - Google Patents
化合物半導体の液相エピタキシヤル成長法Info
- Publication number
- JPS63133619A JPS63133619A JP61281056A JP28105686A JPS63133619A JP S63133619 A JPS63133619 A JP S63133619A JP 61281056 A JP61281056 A JP 61281056A JP 28105686 A JP28105686 A JP 28105686A JP S63133619 A JPS63133619 A JP S63133619A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- substrate
- compound semiconductor
- metal solution
- epitaxial growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000012010 growth Effects 0.000 title claims abstract description 72
- 239000007791 liquid phase Substances 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 title claims abstract description 24
- 150000001875 compounds Chemical class 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims description 58
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 239000013078 crystal Substances 0.000 claims description 71
- 229910052751 metal Inorganic materials 0.000 claims description 24
- 239000002184 metal Substances 0.000 claims description 24
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical group [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 11
- 229910005540 GaP Inorganic materials 0.000 claims description 10
- 230000007423 decrease Effects 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 2
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- 230000003247 decreasing effect Effects 0.000 abstract description 3
- 239000010410 layer Substances 0.000 description 36
- 238000010583 slow cooling Methods 0.000 description 24
- 230000000694 effects Effects 0.000 description 17
- 239000012535 impurity Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 239000007789 gas Substances 0.000 description 8
- 239000002344 surface layer Substances 0.000 description 8
- 239000007787 solid Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 5
- 239000007790 solid phase Substances 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- 108010074864 Factor XI Proteins 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- FTWRSWRBSVXQPI-UHFFFAOYSA-N alumanylidynearsane;gallanylidynearsane Chemical compound [As]#[Al].[As]#[Ga] FTWRSWRBSVXQPI-UHFFFAOYSA-N 0.000 description 1
- 230000003698 anagen phase Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61281056A JPS63133619A (ja) | 1986-11-26 | 1986-11-26 | 化合物半導体の液相エピタキシヤル成長法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61281056A JPS63133619A (ja) | 1986-11-26 | 1986-11-26 | 化合物半導体の液相エピタキシヤル成長法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63133619A true JPS63133619A (ja) | 1988-06-06 |
| JPH0260209B2 JPH0260209B2 (enrdf_load_stackoverflow) | 1990-12-14 |
Family
ID=17633691
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61281056A Granted JPS63133619A (ja) | 1986-11-26 | 1986-11-26 | 化合物半導体の液相エピタキシヤル成長法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63133619A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0579919U (ja) * | 1992-03-31 | 1993-10-29 | 株式会社トーキン | ベース |
-
1986
- 1986-11-26 JP JP61281056A patent/JPS63133619A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0260209B2 (enrdf_load_stackoverflow) | 1990-12-14 |
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