JPS6313340B2 - - Google Patents

Info

Publication number
JPS6313340B2
JPS6313340B2 JP56093147A JP9314781A JPS6313340B2 JP S6313340 B2 JPS6313340 B2 JP S6313340B2 JP 56093147 A JP56093147 A JP 56093147A JP 9314781 A JP9314781 A JP 9314781A JP S6313340 B2 JPS6313340 B2 JP S6313340B2
Authority
JP
Japan
Prior art keywords
substrate
insulating film
temperature
vapor phase
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56093147A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57208146A (en
Inventor
Kazutaka Kamitake
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56093147A priority Critical patent/JPS57208146A/ja
Publication of JPS57208146A publication Critical patent/JPS57208146A/ja
Publication of JPS6313340B2 publication Critical patent/JPS6313340B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
JP56093147A 1981-06-17 1981-06-17 Forming method for insulating film to compound semiconductor Granted JPS57208146A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56093147A JPS57208146A (en) 1981-06-17 1981-06-17 Forming method for insulating film to compound semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56093147A JPS57208146A (en) 1981-06-17 1981-06-17 Forming method for insulating film to compound semiconductor

Publications (2)

Publication Number Publication Date
JPS57208146A JPS57208146A (en) 1982-12-21
JPS6313340B2 true JPS6313340B2 (enExample) 1988-03-25

Family

ID=14074415

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56093147A Granted JPS57208146A (en) 1981-06-17 1981-06-17 Forming method for insulating film to compound semiconductor

Country Status (1)

Country Link
JP (1) JPS57208146A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4560420A (en) * 1984-06-13 1985-12-24 At&T Technologies, Inc. Method for reducing temperature variations across a semiconductor wafer during heating
US6594446B2 (en) 2000-12-04 2003-07-15 Vortek Industries Ltd. Heat-treating methods and systems
CN100416243C (zh) 2001-12-26 2008-09-03 加拿大马特森技术有限公司 测量温度和热处理的方法及系统
DE10393962B4 (de) 2002-12-20 2019-03-14 Mattson Technology Inc. Verfahren und Vorrichtung zum Stützen eines Werkstücks und zur Wärmebehandlung des Werkstücks
JP5630935B2 (ja) 2003-12-19 2014-11-26 マトソン テクノロジー、インコーポレイテッド 工作物の熱誘起運動を抑制する機器及び装置
KR101610269B1 (ko) 2008-05-16 2016-04-07 맷슨 테크놀로지, 인크. 워크피스 파손 방지 방법 및 장치

Also Published As

Publication number Publication date
JPS57208146A (en) 1982-12-21

Similar Documents

Publication Publication Date Title
US5312771A (en) Optical annealing method for semiconductor layer and method for producing semiconductor device employing the same semiconductor layer
US5433791A (en) MBE apparatus with photo-cracker cell
JPH0556852B2 (enExample)
US6165875A (en) Methods for modifying solid phase crystallization kinetics for A-Si films
US4555300A (en) Method for producing single crystal layers on insulators
JPS5884111A (ja) ケイ素の改良されたプラズマ析出法
US5225367A (en) Method for manufacturing an electronic device
JPH02208925A (ja) 半導体膜の形成方法
JP3084395B2 (ja) 半導体薄膜の堆積方法
JPH0345534B2 (enExample)
JPH0652714B2 (ja) 薄膜材料の製造法
JP3208201B2 (ja) 多結晶半導体薄膜の製造方法
US6794274B2 (en) Method for fabricating a polycrystalline silicon film
JPH11195613A (ja) 紫外線アニール装置およびアニール方法
JPS60127745A (ja) 半導体基板
Wiesmann Method of producing hydrogenated amorphous silicon film
JPH0374838A (ja) エピタキシャル成長法
JPH06334171A (ja) ダイヤモンド薄膜素子の製造方法
JPS63299321A (ja) 単結晶シリコン膜の形成方法
JPS61179523A (ja) 単結晶薄膜形成方法
JPH036015A (ja) 半導体膜
JP2565684B2 (ja) 多結晶シリコン薄膜の製造方法
JPH0480878B2 (enExample)
JPS6175517A (ja) 化合物半導体基板のアニ−ル法
JPH025295B2 (enExample)