JPS6313340B2 - - Google Patents
Info
- Publication number
- JPS6313340B2 JPS6313340B2 JP9314781A JP9314781A JPS6313340B2 JP S6313340 B2 JPS6313340 B2 JP S6313340B2 JP 9314781 A JP9314781 A JP 9314781A JP 9314781 A JP9314781 A JP 9314781A JP S6313340 B2 JPS6313340 B2 JP S6313340B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- insulating film
- temperature
- vapor phase
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 41
- 239000013078 crystal Substances 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 18
- 150000001875 compounds Chemical class 0.000 claims description 16
- 238000001947 vapour-phase growth Methods 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 13
- 239000010453 quartz Substances 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005979 thermal decomposition reaction Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000029052 metamorphosis Effects 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000002294 plasma sputter deposition Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9314781A JPS57208146A (en) | 1981-06-17 | 1981-06-17 | Forming method for insulating film to compound semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9314781A JPS57208146A (en) | 1981-06-17 | 1981-06-17 | Forming method for insulating film to compound semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57208146A JPS57208146A (en) | 1982-12-21 |
| JPS6313340B2 true JPS6313340B2 (enrdf_load_stackoverflow) | 1988-03-25 |
Family
ID=14074415
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9314781A Granted JPS57208146A (en) | 1981-06-17 | 1981-06-17 | Forming method for insulating film to compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57208146A (enrdf_load_stackoverflow) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4560420A (en) * | 1984-06-13 | 1985-12-24 | At&T Technologies, Inc. | Method for reducing temperature variations across a semiconductor wafer during heating |
| US6594446B2 (en) | 2000-12-04 | 2003-07-15 | Vortek Industries Ltd. | Heat-treating methods and systems |
| US7445382B2 (en) | 2001-12-26 | 2008-11-04 | Mattson Technology Canada, Inc. | Temperature measurement and heat-treating methods and system |
| US9627244B2 (en) | 2002-12-20 | 2017-04-18 | Mattson Technology, Inc. | Methods and systems for supporting a workpiece and for heat-treating the workpiece |
| WO2005059991A1 (en) | 2003-12-19 | 2005-06-30 | Mattson Technology Canada Inc. | Apparatuses and methods for suppressing thermally induced motion of a workpiece |
| JP5718809B2 (ja) | 2008-05-16 | 2015-05-13 | マトソン テクノロジー、インコーポレイテッド | 加工品の破壊を防止する方法および装置 |
-
1981
- 1981-06-17 JP JP9314781A patent/JPS57208146A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57208146A (en) | 1982-12-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5312771A (en) | Optical annealing method for semiconductor layer and method for producing semiconductor device employing the same semiconductor layer | |
| US5433791A (en) | MBE apparatus with photo-cracker cell | |
| US6165875A (en) | Methods for modifying solid phase crystallization kinetics for A-Si films | |
| JPS6313340B2 (enrdf_load_stackoverflow) | ||
| US4555300A (en) | Method for producing single crystal layers on insulators | |
| US5225367A (en) | Method for manufacturing an electronic device | |
| JPS63299322A (ja) | 単結晶シリコン膜の形成方法 | |
| JP3458216B2 (ja) | 多結晶半導体膜の製造方法 | |
| JP3084395B2 (ja) | 半導体薄膜の堆積方法 | |
| JP3082164B2 (ja) | レーザー処理方法及び半導体装置 | |
| JPH0345534B2 (enrdf_load_stackoverflow) | ||
| JPH0652714B2 (ja) | 薄膜材料の製造法 | |
| JP3208201B2 (ja) | 多結晶半導体薄膜の製造方法 | |
| GB2202236A (en) | Manufacture of electronic devices comprising cadmium mercury telluride involving vapour phase deposition | |
| US6794274B2 (en) | Method for fabricating a polycrystalline silicon film | |
| JPH11195613A (ja) | 紫外線アニール装置およびアニール方法 | |
| JP2550998B2 (ja) | 単結晶シリコン膜の形成方法 | |
| JPH02202022A (ja) | 半導体装置の製造方法 | |
| JPS60127745A (ja) | 半導体基板 | |
| JPH0374838A (ja) | エピタキシャル成長法 | |
| Wiesmann | Method of producing hydrogenated amorphous silicon film | |
| JPH038101B2 (enrdf_load_stackoverflow) | ||
| JPS61179523A (ja) | 単結晶薄膜形成方法 | |
| JPS59172715A (ja) | 分子線発生装置 | |
| JPH036015A (ja) | 半導体膜 |