JPS6313339B2 - - Google Patents
Info
- Publication number
- JPS6313339B2 JPS6313339B2 JP55104526A JP10452680A JPS6313339B2 JP S6313339 B2 JPS6313339 B2 JP S6313339B2 JP 55104526 A JP55104526 A JP 55104526A JP 10452680 A JP10452680 A JP 10452680A JP S6313339 B2 JPS6313339 B2 JP S6313339B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- semiconductor
- silicon nitride
- protective film
- nitride film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10452680A JPS5730337A (en) | 1980-07-30 | 1980-07-30 | Formation of surface protecting film for semiconductor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10452680A JPS5730337A (en) | 1980-07-30 | 1980-07-30 | Formation of surface protecting film for semiconductor |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5730337A JPS5730337A (en) | 1982-02-18 |
JPS6313339B2 true JPS6313339B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-03-25 |
Family
ID=14382928
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10452680A Granted JPS5730337A (en) | 1980-07-30 | 1980-07-30 | Formation of surface protecting film for semiconductor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5730337A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6461026A (en) * | 1987-09-01 | 1989-03-08 | Nec Corp | Manufacture of semiconductor device |
JPH088265B2 (ja) * | 1988-09-13 | 1996-01-29 | 株式会社東芝 | 化合物半導体装置とその製造方法 |
US7585704B2 (en) * | 2005-04-01 | 2009-09-08 | International Business Machines Corporation | Method of producing highly strained PECVD silicon nitride thin films at low temperature |
TWI338335B (en) * | 2005-11-07 | 2011-03-01 | Samsung Electronics Co Ltd | Semiconductor devices and methods of manufacturing the same |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0006492B1 (de) * | 1978-06-26 | 1981-11-25 | Contraves Ag | Verfahren zur digitalen Interpolation einer Periode eines dreiphasigen Analogsignals |
-
1980
- 1980-07-30 JP JP10452680A patent/JPS5730337A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5730337A (en) | 1982-02-18 |