JPS63128634A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS63128634A JPS63128634A JP61275912A JP27591286A JPS63128634A JP S63128634 A JPS63128634 A JP S63128634A JP 61275912 A JP61275912 A JP 61275912A JP 27591286 A JP27591286 A JP 27591286A JP S63128634 A JPS63128634 A JP S63128634A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- pad
- semiconductor device
- electrode
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 238000000034 method Methods 0.000 claims abstract description 13
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 abstract description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 19
- 230000007797 corrosion Effects 0.000 abstract description 9
- 238000005260 corrosion Methods 0.000 abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052710 silicon Inorganic materials 0.000 abstract description 5
- 239000010703 silicon Substances 0.000 abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052802 copper Inorganic materials 0.000 abstract description 3
- 239000010949 copper Substances 0.000 abstract description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010931 gold Substances 0.000 abstract description 2
- 229910052737 gold Inorganic materials 0.000 abstract description 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 230000000593 degrading effect Effects 0.000 abstract 1
- 230000035515 penetration Effects 0.000 abstract 1
- 230000001681 protective effect Effects 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 239000000126 substance Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010828 elution Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000011265 semifinished product Substances 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- -1 alcohol amines Chemical class 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910001593 boehmite Inorganic materials 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- FAHBNUUHRFUEAI-UHFFFAOYSA-M hydroxidooxidoaluminium Chemical compound O[Al]=O FAHBNUUHRFUEAI-UHFFFAOYSA-M 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
Classifications
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- Engineering & Computer Science (AREA)
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- Power Engineering (AREA)
- Wire Bonding (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61275912A JPS63128634A (ja) | 1986-11-18 | 1986-11-18 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61275912A JPS63128634A (ja) | 1986-11-18 | 1986-11-18 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS63128634A true JPS63128634A (ja) | 1988-06-01 |
JPH0546978B2 JPH0546978B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-07-15 |
Family
ID=17562157
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61275912A Granted JPS63128634A (ja) | 1986-11-18 | 1986-11-18 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63128634A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6472304B2 (en) * | 1999-01-23 | 2002-10-29 | Agere Systems Inc. | Wire bonding to copper |
US20120032354A1 (en) * | 2010-08-06 | 2012-02-09 | National Semiconductor Corporation | Wirebonding method and device enabling high-speed reverse wedge bonding of wire bonds |
EP2444999A4 (en) * | 2009-06-18 | 2012-11-14 | Rohm Co Ltd | SEMICONDUCTOR DEVICE |
JP2017011176A (ja) * | 2015-06-24 | 2017-01-12 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56116634A (en) * | 1980-02-20 | 1981-09-12 | Hitachi Ltd | Semiconductor device |
JPS56162844A (en) * | 1980-05-19 | 1981-12-15 | Hitachi Ltd | Semiconductor device and manufacture thereof |
JPS59150460A (ja) * | 1983-01-31 | 1984-08-28 | Toshiba Corp | 半導体装置の製造方法 |
-
1986
- 1986-11-18 JP JP61275912A patent/JPS63128634A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56116634A (en) * | 1980-02-20 | 1981-09-12 | Hitachi Ltd | Semiconductor device |
JPS56162844A (en) * | 1980-05-19 | 1981-12-15 | Hitachi Ltd | Semiconductor device and manufacture thereof |
JPS59150460A (ja) * | 1983-01-31 | 1984-08-28 | Toshiba Corp | 半導体装置の製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6472304B2 (en) * | 1999-01-23 | 2002-10-29 | Agere Systems Inc. | Wire bonding to copper |
EP2444999A4 (en) * | 2009-06-18 | 2012-11-14 | Rohm Co Ltd | SEMICONDUCTOR DEVICE |
US9780069B2 (en) | 2009-06-18 | 2017-10-03 | Rohm Co., Ltd. | Semiconductor device |
US10163850B2 (en) | 2009-06-18 | 2018-12-25 | Rohm Co., Ltd. | Semiconductor device |
US20120032354A1 (en) * | 2010-08-06 | 2012-02-09 | National Semiconductor Corporation | Wirebonding method and device enabling high-speed reverse wedge bonding of wire bonds |
JP2017011176A (ja) * | 2015-06-24 | 2017-01-12 | ローム株式会社 | 半導体装置および半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0546978B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1993-07-15 |
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