JPS63121667A - 薄膜形成装置 - Google Patents
薄膜形成装置Info
- Publication number
- JPS63121667A JPS63121667A JP61266834A JP26683486A JPS63121667A JP S63121667 A JPS63121667 A JP S63121667A JP 61266834 A JP61266834 A JP 61266834A JP 26683486 A JP26683486 A JP 26683486A JP S63121667 A JPS63121667 A JP S63121667A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- magnetic field
- substrate
- space
- microwave
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 230000005684 electric field Effects 0.000 claims description 23
- 230000003993 interaction Effects 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 3
- 239000007795 chemical reaction product Substances 0.000 claims 1
- 239000000047 product Substances 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 38
- 239000007789 gas Substances 0.000 abstract description 18
- 229910052799 carbon Inorganic materials 0.000 abstract description 8
- 229910003460 diamond Inorganic materials 0.000 abstract description 7
- 239000010432 diamond Substances 0.000 abstract description 7
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 5
- HSFWRNGVRCDJHI-UHFFFAOYSA-N Acetylene Chemical compound C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 3
- 239000001257 hydrogen Substances 0.000 abstract description 3
- 239000004215 Carbon black (E152) Substances 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 229930195733 hydrocarbon Natural products 0.000 abstract 1
- 150000002430 hydrocarbons Chemical class 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000001475 halogen functional group Chemical group 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910000951 Aluminide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 241001364096 Pachycephalidae Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61266834A JPS63121667A (ja) | 1986-11-10 | 1986-11-10 | 薄膜形成装置 |
| DE3752208T DE3752208T2 (de) | 1986-11-10 | 1987-11-02 | Durch Mikrowellen gesteigertes CVD-Verfahren und -Gerät |
| EP87116091A EP0267513B1 (en) | 1986-11-10 | 1987-11-02 | Microwave enhanced CVD method and apparatus |
| KR1019870012471A KR930005010B1 (ko) | 1986-11-10 | 1987-11-06 | 마이크로파 증강 cvd장치 및 방법 |
| CN87107779A CN1017726B (zh) | 1986-11-10 | 1987-11-09 | 加有磁场的微波等离子体化学汽相淀积法 |
| US07/966,562 US5266363A (en) | 1986-11-10 | 1992-10-26 | Plasma processing method utilizing a microwave and a magnetic field at high pressure |
| US08/470,596 US6677001B1 (en) | 1986-11-10 | 1995-06-06 | Microwave enhanced CVD method and apparatus |
| US11/102,651 US20050196549A1 (en) | 1986-11-10 | 2005-04-11 | Microwave enhanced CVD method and apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61266834A JPS63121667A (ja) | 1986-11-10 | 1986-11-10 | 薄膜形成装置 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14506890A Division JPH03166379A (ja) | 1990-06-01 | 1990-06-01 | 被膜形成方法 |
| JP14506790A Division JPH0317274A (ja) | 1990-06-01 | 1990-06-01 | 被膜形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63121667A true JPS63121667A (ja) | 1988-05-25 |
| JPH0420984B2 JPH0420984B2 (enrdf_load_stackoverflow) | 1992-04-07 |
Family
ID=17436303
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61266834A Granted JPS63121667A (ja) | 1986-11-10 | 1986-11-10 | 薄膜形成装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63121667A (enrdf_load_stackoverflow) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63145782A (ja) * | 1986-12-08 | 1988-06-17 | Semiconductor Energy Lab Co Ltd | 薄膜形成方法 |
| JPS63169380A (ja) * | 1987-01-05 | 1988-07-13 | Semiconductor Energy Lab Co Ltd | 炭素膜がコ−テイングされた時計 |
| JPS63169386A (ja) * | 1987-01-05 | 1988-07-13 | Semiconductor Energy Lab Co Ltd | 薄膜形成方法 |
| JPS63169387A (ja) * | 1987-01-05 | 1988-07-13 | Semiconductor Energy Lab Co Ltd | 薄膜形成方法 |
| JPS63169379A (ja) * | 1987-01-05 | 1988-07-13 | Semiconductor Energy Lab Co Ltd | 薄膜形成方法 |
| JPS63195267A (ja) * | 1987-02-10 | 1988-08-12 | Semiconductor Energy Lab Co Ltd | 炭素膜作製方法 |
| JPS63195266A (ja) * | 1987-02-10 | 1988-08-12 | Semiconductor Energy Lab Co Ltd | 炭素膜がコーティングされた時計 |
| US5250149A (en) * | 1990-03-06 | 1993-10-05 | Sumitomo Electric Industries, Ltd. | Method of growing thin film |
| JPH07233478A (ja) * | 1994-06-06 | 1995-09-05 | Semiconductor Energy Lab Co Ltd | プラズマ処理方法 |
-
1986
- 1986-11-10 JP JP61266834A patent/JPS63121667A/ja active Granted
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63145782A (ja) * | 1986-12-08 | 1988-06-17 | Semiconductor Energy Lab Co Ltd | 薄膜形成方法 |
| JPS63169380A (ja) * | 1987-01-05 | 1988-07-13 | Semiconductor Energy Lab Co Ltd | 炭素膜がコ−テイングされた時計 |
| JPS63169386A (ja) * | 1987-01-05 | 1988-07-13 | Semiconductor Energy Lab Co Ltd | 薄膜形成方法 |
| JPS63169387A (ja) * | 1987-01-05 | 1988-07-13 | Semiconductor Energy Lab Co Ltd | 薄膜形成方法 |
| JPS63169379A (ja) * | 1987-01-05 | 1988-07-13 | Semiconductor Energy Lab Co Ltd | 薄膜形成方法 |
| JPS63195267A (ja) * | 1987-02-10 | 1988-08-12 | Semiconductor Energy Lab Co Ltd | 炭素膜作製方法 |
| JPS63195266A (ja) * | 1987-02-10 | 1988-08-12 | Semiconductor Energy Lab Co Ltd | 炭素膜がコーティングされた時計 |
| US5250149A (en) * | 1990-03-06 | 1993-10-05 | Sumitomo Electric Industries, Ltd. | Method of growing thin film |
| JPH07233478A (ja) * | 1994-06-06 | 1995-09-05 | Semiconductor Energy Lab Co Ltd | プラズマ処理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0420984B2 (enrdf_load_stackoverflow) | 1992-04-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR900008505B1 (ko) | 탄소 석출을 위한 마이크로파 강화 cvd 방법 | |
| JPH0672306B2 (ja) | プラズマ処理装置およびプラズマ処理方法 | |
| US5039548A (en) | Plasma chemical vapor reaction method employing cyclotron resonance | |
| JPS63210275A (ja) | プラズマ反応装置内を清浄にする方法 | |
| JP4741060B2 (ja) | 基板の析出表面上に反応ガスからの原子又は分子をエピタキシャルに析出させる方法及び装置 | |
| KR100325500B1 (ko) | 반도체 박막의 제조 방법 및 그 장치 | |
| JPS63121667A (ja) | 薄膜形成装置 | |
| JP2965935B2 (ja) | プラズマｃｖｄ方法 | |
| JPS63145782A (ja) | 薄膜形成方法 | |
| US5270029A (en) | Carbon substance and its manufacturing method | |
| JPH0543792B2 (enrdf_load_stackoverflow) | ||
| JP2660244B2 (ja) | 表面処理方法 | |
| JP2739286B2 (ja) | プラズマ処理方法 | |
| US6677001B1 (en) | Microwave enhanced CVD method and apparatus | |
| JP2769977B2 (ja) | プラズマ処理方法 | |
| JP2899254B2 (ja) | プラズマｃｖｄ装置 | |
| JPH0543793B2 (enrdf_load_stackoverflow) | ||
| JP2715277B2 (ja) | 薄膜形成装置 | |
| JP2617539B2 (ja) | 立方晶窒化ほう素膜の製造装置 | |
| JP2892347B2 (ja) | 薄膜形成方法 | |
| JPS63169387A (ja) | 薄膜形成方法 | |
| JP2691399B2 (ja) | プラズマ処理方法 | |
| JPH0672307B2 (ja) | プラズマ処理装置およびプラズマ処理方法 | |
| JPH0814022B2 (ja) | 不要物の除去方法 | |
| JP2000026193A (ja) | 薄 膜 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |