JPS63102220A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS63102220A JPS63102220A JP61247529A JP24752986A JPS63102220A JP S63102220 A JPS63102220 A JP S63102220A JP 61247529 A JP61247529 A JP 61247529A JP 24752986 A JP24752986 A JP 24752986A JP S63102220 A JPS63102220 A JP S63102220A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- polycrystalline silicon
- island
- silicon island
- molten
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Recrystallisation Techniques (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61247529A JPS63102220A (ja) | 1986-10-20 | 1986-10-20 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61247529A JPS63102220A (ja) | 1986-10-20 | 1986-10-20 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63102220A true JPS63102220A (ja) | 1988-05-07 |
| JPH0410213B2 JPH0410213B2 (enExample) | 1992-02-24 |
Family
ID=17164850
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61247529A Granted JPS63102220A (ja) | 1986-10-20 | 1986-10-20 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63102220A (enExample) |
-
1986
- 1986-10-20 JP JP61247529A patent/JPS63102220A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0410213B2 (enExample) | 1992-02-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |