JPS629189B2 - - Google Patents
Info
- Publication number
- JPS629189B2 JPS629189B2 JP57000997A JP99782A JPS629189B2 JP S629189 B2 JPS629189 B2 JP S629189B2 JP 57000997 A JP57000997 A JP 57000997A JP 99782 A JP99782 A JP 99782A JP S629189 B2 JPS629189 B2 JP S629189B2
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- photochemical reaction
- deposition
- tank
- ultraviolet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP99782A JPS58119334A (ja) | 1982-01-08 | 1982-01-08 | 光化学反応蒸着方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP99782A JPS58119334A (ja) | 1982-01-08 | 1982-01-08 | 光化学反応蒸着方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58119334A JPS58119334A (ja) | 1983-07-15 |
JPS629189B2 true JPS629189B2 (enrdf_load_stackoverflow) | 1987-02-26 |
Family
ID=11489228
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP99782A Granted JPS58119334A (ja) | 1982-01-08 | 1982-01-08 | 光化学反応蒸着方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58119334A (enrdf_load_stackoverflow) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6043484A (ja) * | 1983-08-19 | 1985-03-08 | Mitsui Toatsu Chem Inc | 広いバンドギヤツプを有するアモルフアスシリコン膜の形成方法 |
JPS6199676A (ja) * | 1984-10-19 | 1986-05-17 | Semiconductor Energy Lab Co Ltd | 窒化珪素作製方法 |
JPH06104901B2 (ja) * | 1986-03-07 | 1994-12-21 | 日本電気株式会社 | 光cvd方法 |
JPS6274084A (ja) * | 1985-09-27 | 1987-04-04 | Sanyo Electric Co Ltd | 周期構造膜の製造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4181751A (en) * | 1978-05-24 | 1980-01-01 | Hughes Aircraft Company | Process for the preparation of low temperature silicon nitride films by photochemical vapor deposition |
-
1982
- 1982-01-08 JP JP99782A patent/JPS58119334A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58119334A (ja) | 1983-07-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4495218A (en) | Process for forming thin film | |
EP0095275B1 (en) | Photo-assisted cvd | |
US4466992A (en) | Healing pinhole defects in amorphous silicon films | |
JPH0546092B2 (enrdf_load_stackoverflow) | ||
Takahashi et al. | Synchrotron radiation excited Si epitaxial growth using disilane gas source molecular beam system | |
JPS629189B2 (enrdf_load_stackoverflow) | ||
KR850001974B1 (ko) | 광화학적 증착방법 및 장치 | |
EP0407088B1 (en) | Method of forming an amorphous semiconductor film | |
JP2608456B2 (ja) | 薄膜形成装置 | |
JPS6028225A (ja) | 光気相成長法 | |
Nara et al. | Synchrotron radiation-assisted silicon film growth by irradiation parallel to the substrate | |
JPH04105314A (ja) | 非晶質シリコンの製造方法 | |
JPS6118125A (ja) | 薄膜形成装置 | |
JP2654456B2 (ja) | 高品質igfetの作製方法 | |
JPS62212297A (ja) | 半導体ダイヤモンドの製造方法 | |
JPH0294430A (ja) | 光cvd装置 | |
JPS6052579A (ja) | 光学的窒化膜形成装置 | |
JPS6156279A (ja) | 成膜方法 | |
JPS6156278A (ja) | 成膜方法 | |
JPH0257145B2 (enrdf_load_stackoverflow) | ||
JPH02234429A (ja) | 窒化シリコン膜の製造方法 | |
JPH0364019A (ja) | 半導体薄膜 | |
JPS61146791A (ja) | ダイヤモンド膜又はダイヤモンド状炭素膜の形成方法 | |
JPS62230978A (ja) | 堆積膜形成装置 | |
JPS647495B2 (enrdf_load_stackoverflow) |