JPS628953B2 - - Google Patents

Info

Publication number
JPS628953B2
JPS628953B2 JP53006289A JP628978A JPS628953B2 JP S628953 B2 JPS628953 B2 JP S628953B2 JP 53006289 A JP53006289 A JP 53006289A JP 628978 A JP628978 A JP 628978A JP S628953 B2 JPS628953 B2 JP S628953B2
Authority
JP
Japan
Prior art keywords
thin film
copper
aluminum
indium
contacts
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53006289A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5394188A (en
Inventor
Chen Ruo Fuan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of JPS5394188A publication Critical patent/JPS5394188A/ja
Publication of JPS628953B2 publication Critical patent/JPS628953B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Illuminated Signs And Luminous Advertising (AREA)
  • Electrodes Of Semiconductors (AREA)
JP628978A 1977-01-26 1978-01-25 Thin film transistor matrix array Granted JPS5394188A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/762,546 US4115799A (en) 1977-01-26 1977-01-26 Thin film copper transition between aluminum and indium copper films

Publications (2)

Publication Number Publication Date
JPS5394188A JPS5394188A (en) 1978-08-17
JPS628953B2 true JPS628953B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1987-02-25

Family

ID=25065370

Family Applications (1)

Application Number Title Priority Date Filing Date
JP628978A Granted JPS5394188A (en) 1977-01-26 1978-01-25 Thin film transistor matrix array

Country Status (6)

Country Link
US (1) US4115799A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS5394188A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2802822A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2378355A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1558055A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL7714469A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3051063C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1979-12-13 1991-04-11 Energy Conversion Devices, Inc., Troy, Mich., Us
JPS58140781A (ja) * 1982-02-17 1983-08-20 株式会社日立製作所 画像表示装置
US5019807A (en) * 1984-07-25 1991-05-28 Staplevision, Inc. Display screen
FR2593630B1 (fr) * 1986-01-27 1988-03-18 Maurice Francois Ecran d'affichage a matrice active a resistance de drain et procedes de fabrication de cet ecran
JPS6319876A (ja) * 1986-07-11 1988-01-27 Fuji Xerox Co Ltd 薄膜トランジスタ装置
US5166085A (en) * 1987-09-09 1992-11-24 Casio Computer Co., Ltd. Method of manufacturing a thin film transistor
US5327001A (en) * 1987-09-09 1994-07-05 Casio Computer Co., Ltd. Thin film transistor array having single light shield layer over transistors and gate and drain lines
US5229644A (en) * 1987-09-09 1993-07-20 Casio Computer Co., Ltd. Thin film transistor having a transparent electrode and substrate
US5032883A (en) * 1987-09-09 1991-07-16 Casio Computer Co., Ltd. Thin film transistor and method of manufacturing the same
US4990460A (en) * 1989-01-27 1991-02-05 Nec Corporation Fabrication method for thin film field effect transistor array suitable for liquid crystal display

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3313959A (en) * 1966-08-08 1967-04-11 Hughes Aircraft Co Thin-film resonance device
US3483038A (en) * 1967-01-05 1969-12-09 Rca Corp Integrated array of thin-film photovoltaic cells and method of making same
GB1161647A (en) * 1967-08-04 1969-08-13 Rca Corp Thin Film Field-Effect Solid State Devices
JPS4913914B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1969-12-25 1974-04-03
US3840695A (en) * 1972-10-10 1974-10-08 Westinghouse Electric Corp Liquid crystal image display panel with integrated addressing circuitry
US4065781A (en) * 1974-06-21 1977-12-27 Westinghouse Electric Corporation Insulated-gate thin film transistor with low leakage current
US4000842A (en) * 1975-06-02 1977-01-04 National Semiconductor Corporation Copper-to-gold thermal compression gang bonding of interconnect leads to semiconductive devices
US4040073A (en) * 1975-08-29 1977-08-02 Westinghouse Electric Corporation Thin film transistor and display panel using the transistor

Also Published As

Publication number Publication date
FR2378355A1 (fr) 1978-08-18
DE2802822A1 (de) 1978-07-27
US4115799A (en) 1978-09-19
GB1558055A (en) 1979-12-19
JPS5394188A (en) 1978-08-17
NL7714469A (nl) 1978-07-28
DE2802822C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1987-08-13

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