FR2378355A1 - Film de transition, mince, entre un film d'aluminium et un film indium-cuivre - Google Patents
Film de transition, mince, entre un film d'aluminium et un film indium-cuivreInfo
- Publication number
- FR2378355A1 FR2378355A1 FR7737554A FR7737554A FR2378355A1 FR 2378355 A1 FR2378355 A1 FR 2378355A1 FR 7737554 A FR7737554 A FR 7737554A FR 7737554 A FR7737554 A FR 7737554A FR 2378355 A1 FR2378355 A1 FR 2378355A1
- Authority
- FR
- France
- Prior art keywords
- film
- thin
- indium
- copper
- transition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/62—Electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
- Illuminated Signs And Luminous Advertising (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/762,546 US4115799A (en) | 1977-01-26 | 1977-01-26 | Thin film copper transition between aluminum and indium copper films |
Publications (1)
Publication Number | Publication Date |
---|---|
FR2378355A1 true FR2378355A1 (fr) | 1978-08-18 |
Family
ID=25065370
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7737554A Withdrawn FR2378355A1 (fr) | 1977-01-26 | 1977-12-13 | Film de transition, mince, entre un film d'aluminium et un film indium-cuivre |
Country Status (6)
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2474763A1 (fr) * | 1979-12-13 | 1981-07-31 | Energy Conversion Devices Inc | Transistor a film mince |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58140781A (ja) * | 1982-02-17 | 1983-08-20 | 株式会社日立製作所 | 画像表示装置 |
US5019807A (en) * | 1984-07-25 | 1991-05-28 | Staplevision, Inc. | Display screen |
FR2593630B1 (fr) * | 1986-01-27 | 1988-03-18 | Maurice Francois | Ecran d'affichage a matrice active a resistance de drain et procedes de fabrication de cet ecran |
JPS6319876A (ja) * | 1986-07-11 | 1988-01-27 | Fuji Xerox Co Ltd | 薄膜トランジスタ装置 |
US5166085A (en) * | 1987-09-09 | 1992-11-24 | Casio Computer Co., Ltd. | Method of manufacturing a thin film transistor |
US5327001A (en) * | 1987-09-09 | 1994-07-05 | Casio Computer Co., Ltd. | Thin film transistor array having single light shield layer over transistors and gate and drain lines |
US5229644A (en) * | 1987-09-09 | 1993-07-20 | Casio Computer Co., Ltd. | Thin film transistor having a transparent electrode and substrate |
US5032883A (en) * | 1987-09-09 | 1991-07-16 | Casio Computer Co., Ltd. | Thin film transistor and method of manufacturing the same |
US4990460A (en) * | 1989-01-27 | 1991-02-05 | Nec Corporation | Fabrication method for thin film field effect transistor array suitable for liquid crystal display |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3313959A (en) * | 1966-08-08 | 1967-04-11 | Hughes Aircraft Co | Thin-film resonance device |
GB1161647A (en) * | 1967-08-04 | 1969-08-13 | Rca Corp | Thin Film Field-Effect Solid State Devices |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3483038A (en) * | 1967-01-05 | 1969-12-09 | Rca Corp | Integrated array of thin-film photovoltaic cells and method of making same |
JPS4913914B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 1969-12-25 | 1974-04-03 | ||
US3840695A (en) * | 1972-10-10 | 1974-10-08 | Westinghouse Electric Corp | Liquid crystal image display panel with integrated addressing circuitry |
US4065781A (en) * | 1974-06-21 | 1977-12-27 | Westinghouse Electric Corporation | Insulated-gate thin film transistor with low leakage current |
US4000842A (en) * | 1975-06-02 | 1977-01-04 | National Semiconductor Corporation | Copper-to-gold thermal compression gang bonding of interconnect leads to semiconductive devices |
US4040073A (en) * | 1975-08-29 | 1977-08-02 | Westinghouse Electric Corporation | Thin film transistor and display panel using the transistor |
-
1977
- 1977-01-26 US US05/762,546 patent/US4115799A/en not_active Expired - Lifetime
- 1977-12-13 FR FR7737554A patent/FR2378355A1/fr not_active Withdrawn
- 1977-12-28 NL NL7714469A patent/NL7714469A/xx not_active Application Discontinuation
-
1978
- 1978-01-09 GB GB727/78A patent/GB1558055A/en not_active Expired
- 1978-01-23 DE DE19782802822 patent/DE2802822A1/de active Granted
- 1978-01-25 JP JP628978A patent/JPS5394188A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3313959A (en) * | 1966-08-08 | 1967-04-11 | Hughes Aircraft Co | Thin-film resonance device |
GB1161647A (en) * | 1967-08-04 | 1969-08-13 | Rca Corp | Thin Film Field-Effect Solid State Devices |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2474763A1 (fr) * | 1979-12-13 | 1981-07-31 | Energy Conversion Devices Inc | Transistor a film mince |
Also Published As
Publication number | Publication date |
---|---|
DE2802822A1 (de) | 1978-07-27 |
US4115799A (en) | 1978-09-19 |
GB1558055A (en) | 1979-12-19 |
JPS628953B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-02-25 |
JPS5394188A (en) | 1978-08-17 |
NL7714469A (nl) | 1978-07-28 |
DE2802822C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-08-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2360174A1 (fr) | Boitier de circuit integre et son procede de fabrication | |
BG37074A3 (bg) | Метод за получаване на производни на пролина | |
FR2378355A1 (fr) | Film de transition, mince, entre un film d'aluminium et un film indium-cuivre | |
IT1118043B (it) | Transitori ad effetto di campo e circuiti integrati realizzati contali transistori | |
NL7712872A (nl) | Bankschroef. | |
IT7822998A0 (it) | D'oro. elettrolita per la elettrodeposizione di una lega | |
IT8125625A0 (it) | Sorgente di tensione termostabile. | |
FR2364564A1 (fr) | Circuit de compensation du courant de decalage dans un demodulateur synchrone a multiplieur, notamment un demodulateur stereophonique multiplex | |
JPS53108382A (en) | Semiconductor device | |
JPS5439573A (en) | Compound semiconductor device | |
IT7923489A0 (it) | Miglioramenti della conduttivita'elettrica di leghe di alluminio per aggiunta di ittrio. | |
JPS5310283A (en) | 54)mos type semiconductor integrated circuit | |
FR2320015A1 (fr) | Circuit de conference pour centraux telephoniques de commutation de type numerique | |
JPS5320776A (en) | Production of metal insulation film semiconductor device | |
JPS5238889A (en) | Vertical junction type field effect transistor | |
JPS5384570A (en) | Field effect semiconductor device and its manufacture | |
FR2377123A1 (fr) | Circuit logique integre | |
IT8219363A0 (it) | Disposizione di montaggio rapido autoregolabile. | |
BE858671A (fr) | Perfectionnements aux etages de commutation electroniques | |
IT7824434A0 (it) | Disposizione circuitale di transistori connessi in serie. | |
JPS5384571A (en) | Insulating gate type field effect transistor and its manufacture | |
JPS53143177A (en) | Production of field effect transistor | |
JPS5423478A (en) | Semiconductor device of field effect type | |
BE745194A (fr) | Perfectionnements aux centres de commutation en multiplex dans le temp | |
FR2320360A1 (fr) | Procede pour le recuit d'alliages de cuivre, en particulier de laiton |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse | ||
AR | Application made for restoration | ||
DI | Inadmissibility of an action of restoration |