JPS6285227A - 光回路機能素子 - Google Patents
光回路機能素子Info
- Publication number
- JPS6285227A JPS6285227A JP60223796A JP22379685A JPS6285227A JP S6285227 A JPS6285227 A JP S6285227A JP 60223796 A JP60223796 A JP 60223796A JP 22379685 A JP22379685 A JP 22379685A JP S6285227 A JPS6285227 A JP S6285227A
- Authority
- JP
- Japan
- Prior art keywords
- ultra
- quantum well
- multilayer structure
- thin
- functional element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims description 65
- 230000005684 electric field Effects 0.000 claims description 35
- 239000010409 thin film Substances 0.000 claims description 22
- 230000008859 change Effects 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 13
- 230000001902 propagating effect Effects 0.000 claims description 4
- 230000005428 wave function Effects 0.000 description 19
- 230000004044 response Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 230000000694 effects Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01725—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
- G02F1/01725—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells
- G02F1/0175—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells with a spatially varied well profile, e.g. graded or stepped quantum wells
- G02F1/01758—Non-rectangular quantum well structures, e.g. graded or stepped quantum wells with a spatially varied well profile, e.g. graded or stepped quantum wells with an asymmetric well profile, e.g. asymmetrically stepped quantum wells
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Nonlinear Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optical Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60223796A JPS6285227A (ja) | 1985-10-09 | 1985-10-09 | 光回路機能素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60223796A JPS6285227A (ja) | 1985-10-09 | 1985-10-09 | 光回路機能素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6285227A true JPS6285227A (ja) | 1987-04-18 |
| JPH0357460B2 JPH0357460B2 (https=) | 1991-09-02 |
Family
ID=16803851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60223796A Granted JPS6285227A (ja) | 1985-10-09 | 1985-10-09 | 光回路機能素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6285227A (https=) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62164019A (ja) * | 1986-01-16 | 1987-07-20 | Nec Corp | 光方向性結合素子 |
| JPS62191822A (ja) * | 1986-02-18 | 1987-08-22 | Nippon Telegr & Teleph Corp <Ntt> | 量子井戸形光変調器およびその製造方法 |
| JPS6390180A (ja) * | 1986-10-03 | 1988-04-21 | Hitachi Ltd | 半導体装置 |
| JPS63313886A (ja) * | 1987-06-17 | 1988-12-21 | Fujitsu Ltd | 半導体発光装置 |
| JPH01102437A (ja) * | 1987-10-15 | 1989-04-20 | Toshiba Corp | 半導体光素子 |
| JPH01262523A (ja) * | 1988-04-14 | 1989-10-19 | Fujitsu Ltd | 光半導体素子 |
| JPH02818A (ja) * | 1987-11-18 | 1990-01-05 | Hitachi Ltd | 半導体光学装置及びこれを用いた記録装置 |
| JPH0351813A (ja) * | 1989-07-19 | 1991-03-06 | Nec Corp | 光半導体材料 |
| JPH0675257A (ja) * | 1992-07-30 | 1994-03-18 | Internatl Business Mach Corp <Ibm> | 非線形光学装置 |
| EP0810462A3 (en) * | 1996-05-29 | 1998-09-09 | Nec Corporation | Electro-absorption type semiconductor optical modulator having a quantum well structure |
-
1985
- 1985-10-09 JP JP60223796A patent/JPS6285227A/ja active Granted
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62164019A (ja) * | 1986-01-16 | 1987-07-20 | Nec Corp | 光方向性結合素子 |
| JPS62191822A (ja) * | 1986-02-18 | 1987-08-22 | Nippon Telegr & Teleph Corp <Ntt> | 量子井戸形光変調器およびその製造方法 |
| JPS6390180A (ja) * | 1986-10-03 | 1988-04-21 | Hitachi Ltd | 半導体装置 |
| JPS63313886A (ja) * | 1987-06-17 | 1988-12-21 | Fujitsu Ltd | 半導体発光装置 |
| JPH01102437A (ja) * | 1987-10-15 | 1989-04-20 | Toshiba Corp | 半導体光素子 |
| JPH02818A (ja) * | 1987-11-18 | 1990-01-05 | Hitachi Ltd | 半導体光学装置及びこれを用いた記録装置 |
| JPH01262523A (ja) * | 1988-04-14 | 1989-10-19 | Fujitsu Ltd | 光半導体素子 |
| JPH0351813A (ja) * | 1989-07-19 | 1991-03-06 | Nec Corp | 光半導体材料 |
| JPH0675257A (ja) * | 1992-07-30 | 1994-03-18 | Internatl Business Mach Corp <Ibm> | 非線形光学装置 |
| EP0810462A3 (en) * | 1996-05-29 | 1998-09-09 | Nec Corporation | Electro-absorption type semiconductor optical modulator having a quantum well structure |
| US6100543A (en) * | 1996-05-29 | 2000-08-08 | Nec Corporation | Electro-absorption type semiconductor optical modulator having a quantum well structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0357460B2 (https=) | 1991-09-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| EXPY | Cancellation because of completion of term |