JPS627699B2 - - Google Patents
Info
- Publication number
- JPS627699B2 JPS627699B2 JP7735779A JP7735779A JPS627699B2 JP S627699 B2 JPS627699 B2 JP S627699B2 JP 7735779 A JP7735779 A JP 7735779A JP 7735779 A JP7735779 A JP 7735779A JP S627699 B2 JPS627699 B2 JP S627699B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- organic compound
- sio
- semiconductor device
- cvd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 22
- 150000002894 organic compounds Chemical class 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000011282 treatment Methods 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims 1
- 229920002120 photoresistant polymer Polymers 0.000 description 59
- 229910004298 SiO 2 Inorganic materials 0.000 description 55
- 239000010410 layer Substances 0.000 description 38
- 239000011229 interlayer Substances 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910001415 sodium ion Inorganic materials 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- NEHMKBQYUWJMIP-UHFFFAOYSA-N chloromethane Chemical compound ClC NEHMKBQYUWJMIP-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7735779A JPS561547A (en) | 1979-06-19 | 1979-06-19 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7735779A JPS561547A (en) | 1979-06-19 | 1979-06-19 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS561547A JPS561547A (en) | 1981-01-09 |
| JPS627699B2 true JPS627699B2 (ko) | 1987-02-18 |
Family
ID=13631650
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7735779A Granted JPS561547A (en) | 1979-06-19 | 1979-06-19 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS561547A (ko) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0250771U (ko) * | 1988-09-30 | 1990-04-10 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5972745A (ja) * | 1982-10-19 | 1984-04-24 | Matsushita Electric Ind Co Ltd | 半導体装置 |
| US4523372A (en) * | 1984-05-07 | 1985-06-18 | Motorola, Inc. | Process for fabricating semiconductor device |
| US5070037A (en) * | 1989-08-31 | 1991-12-03 | Delco Electronics Corporation | Integrated circuit interconnect having dual dielectric intermediate layer |
-
1979
- 1979-06-19 JP JP7735779A patent/JPS561547A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0250771U (ko) * | 1988-09-30 | 1990-04-10 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS561547A (en) | 1981-01-09 |
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