JPS627158A - ホットエレクトロントランジスタの製造方法 - Google Patents
ホットエレクトロントランジスタの製造方法Info
- Publication number
- JPS627158A JPS627158A JP60144571A JP14457185A JPS627158A JP S627158 A JPS627158 A JP S627158A JP 60144571 A JP60144571 A JP 60144571A JP 14457185 A JP14457185 A JP 14457185A JP S627158 A JPS627158 A JP S627158A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- collector
- region
- emitter
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
- 
        - H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/36—Unipolar devices
- H10D48/362—Unipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions, e.g. hot electron transistors [HET], metal base transistors [MBT], resonant tunnelling transistors [RTT], bulk barrier transistors [BBT], planar doped barrier transistors [PDBT] or charge injection transistors [CHINT]
 
Landscapes
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP60144571A JPS627158A (ja) | 1985-07-03 | 1985-07-03 | ホットエレクトロントランジスタの製造方法 | 
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title | 
|---|---|---|---|
| JP60144571A JPS627158A (ja) | 1985-07-03 | 1985-07-03 | ホットエレクトロントランジスタの製造方法 | 
Publications (2)
| Publication Number | Publication Date | 
|---|---|
| JPS627158A true JPS627158A (ja) | 1987-01-14 | 
| JPH0337317B2 JPH0337317B2 (OSRAM) | 1991-06-05 | 
Family
ID=15365293
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date | 
|---|---|---|---|
| JP60144571A Granted JPS627158A (ja) | 1985-07-03 | 1985-07-03 | ホットエレクトロントランジスタの製造方法 | 
Country Status (1)
| Country | Link | 
|---|---|
| JP (1) | JPS627158A (OSRAM) | 
- 
        1985
        - 1985-07-03 JP JP60144571A patent/JPS627158A/ja active Granted
 
Also Published As
| Publication number | Publication date | 
|---|---|
| JPH0337317B2 (OSRAM) | 1991-06-05 | 
Similar Documents
| Publication | Publication Date | Title | 
|---|---|---|
| US4908325A (en) | Method of making heterojunction transistors with wide band-gap stop etch layer | |
| US5294566A (en) | Method of producing a semiconductor integrated circuit device composed of a negative differential resistance element and a FET transistor | |
| US4837178A (en) | Method for producing a semiconductor integrated circuit having an improved isolation structure | |
| JP3262056B2 (ja) | バイポーラトランジスタとその製造方法 | |
| JP3439578B2 (ja) | 半導体装置およびその製造方法 | |
| JP2730544B2 (ja) | 電界効果トランジスタ及びその製造方法 | |
| JPS627158A (ja) | ホットエレクトロントランジスタの製造方法 | |
| JPS5828753B2 (ja) | 縦形電界効果トランジスタの製造方法 | |
| JPH11251328A (ja) | 化合物半導体装置 | |
| JPS59181060A (ja) | 半導体装置 | |
| EP0276981B1 (en) | Semiconductor integrated circuit device and method of producing same | |
| JPH0575170B2 (OSRAM) | ||
| JPS624365A (ja) | 半導体装置 | |
| JPS6084878A (ja) | 負性抵抗特性をもつ半導体装置およびその製造方法 | |
| JPH0429225B2 (OSRAM) | ||
| JP2862705B2 (ja) | ヘテロ接合半導体装置及びその製造方法 | |
| JPH0453108B2 (OSRAM) | ||
| JPH01187863A (ja) | 半導体装置 | |
| JPS63301568A (ja) | 半導体集積回路装置及びその製造方法 | |
| JPH0460340B2 (OSRAM) | ||
| JPS63107066A (ja) | ヘテロ接合型バイポ−ラトランジスタ | |
| JPS61268063A (ja) | 半導体装置 | |
| JPH0575169B2 (OSRAM) | ||
| JPH02192731A (ja) | バイポーラトランジスタ及びその製造方法 | |
| JPS635564A (ja) | ヘテロ接合型バイポ−ラトランジスタ | 
Legal Events
| Date | Code | Title | Description | 
|---|---|---|---|
| EXPY | Cancellation because of completion of term |