JPS6271272A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6271272A
JPS6271272A JP60182262A JP18226285A JPS6271272A JP S6271272 A JPS6271272 A JP S6271272A JP 60182262 A JP60182262 A JP 60182262A JP 18226285 A JP18226285 A JP 18226285A JP S6271272 A JPS6271272 A JP S6271272A
Authority
JP
Japan
Prior art keywords
film
metal silicide
insulating layer
silicide film
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60182262A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0530303B2 (enExample
Inventor
Osamu Hideshima
秀島　修
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP60182262A priority Critical patent/JPS6271272A/ja
Priority to EP86302631A priority patent/EP0199497B1/en
Priority to KR1019860002680A priority patent/KR890004973B1/ko
Priority to DE8686302631T priority patent/DE3683183D1/de
Priority to US06/850,054 priority patent/US4698127A/en
Publication of JPS6271272A publication Critical patent/JPS6271272A/ja
Publication of JPH0530303B2 publication Critical patent/JPH0530303B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
JP60182262A 1985-04-10 1985-08-20 半導体装置の製造方法 Granted JPS6271272A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP60182262A JPS6271272A (ja) 1985-08-20 1985-08-20 半導体装置の製造方法
EP86302631A EP0199497B1 (en) 1985-04-10 1986-04-09 Process for fabricating a self-aligned bipolar transistor
KR1019860002680A KR890004973B1 (ko) 1985-04-10 1986-04-09 자기정합된 바이폴라트랜지스터의 제조방법
DE8686302631T DE3683183D1 (de) 1985-04-10 1986-04-09 Verfahren zum herstellen eines selbtsausrichtenden bipolartransistors.
US06/850,054 US4698127A (en) 1985-04-10 1986-04-10 Process for fabricating a self-aligned bipolar transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60182262A JPS6271272A (ja) 1985-08-20 1985-08-20 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6271272A true JPS6271272A (ja) 1987-04-01
JPH0530303B2 JPH0530303B2 (enExample) 1993-05-07

Family

ID=16115175

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60182262A Granted JPS6271272A (ja) 1985-04-10 1985-08-20 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6271272A (enExample)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58111345A (ja) * 1981-12-25 1983-07-02 Hitachi Ltd 半導体装置
JPS58216463A (ja) * 1982-06-07 1983-12-16 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション バイポ−ラ・トランジスタ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58111345A (ja) * 1981-12-25 1983-07-02 Hitachi Ltd 半導体装置
JPS58216463A (ja) * 1982-06-07 1983-12-16 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション バイポ−ラ・トランジスタ

Also Published As

Publication number Publication date
JPH0530303B2 (enExample) 1993-05-07

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