JPS6269661A - 半導体集積回路の保護回路 - Google Patents

半導体集積回路の保護回路

Info

Publication number
JPS6269661A
JPS6269661A JP60210432A JP21043285A JPS6269661A JP S6269661 A JPS6269661 A JP S6269661A JP 60210432 A JP60210432 A JP 60210432A JP 21043285 A JP21043285 A JP 21043285A JP S6269661 A JPS6269661 A JP S6269661A
Authority
JP
Japan
Prior art keywords
region
semiconductor substrate
protection
drain region
semiconductor integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60210432A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0315824B2 (enExample
Inventor
Hiroshi Momose
百瀬　啓
Shinji Saito
斉藤　伸二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP60210432A priority Critical patent/JPS6269661A/ja
Publication of JPS6269661A publication Critical patent/JPS6269661A/ja
Publication of JPH0315824B2 publication Critical patent/JPH0315824B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP60210432A 1985-09-24 1985-09-24 半導体集積回路の保護回路 Granted JPS6269661A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60210432A JPS6269661A (ja) 1985-09-24 1985-09-24 半導体集積回路の保護回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60210432A JPS6269661A (ja) 1985-09-24 1985-09-24 半導体集積回路の保護回路

Publications (2)

Publication Number Publication Date
JPS6269661A true JPS6269661A (ja) 1987-03-30
JPH0315824B2 JPH0315824B2 (enExample) 1991-03-04

Family

ID=16589221

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60210432A Granted JPS6269661A (ja) 1985-09-24 1985-09-24 半導体集積回路の保護回路

Country Status (1)

Country Link
JP (1) JPS6269661A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2676870A1 (fr) * 1991-05-24 1992-11-27 Sgs Thomson Microelectronics Structure de protection dans un circuit cmos contre le verrouillage.
JPH05109990A (ja) * 1991-10-15 1993-04-30 Nec Corp 半導体集積回路装置
US5247200A (en) * 1989-02-16 1993-09-21 Kabushiki Kaisha Toshiba MOSFET input type BiMOS IC device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5837969A (ja) * 1981-08-31 1983-03-05 Fujitsu Ltd 保護回路素子

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5837969A (ja) * 1981-08-31 1983-03-05 Fujitsu Ltd 保護回路素子

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5247200A (en) * 1989-02-16 1993-09-21 Kabushiki Kaisha Toshiba MOSFET input type BiMOS IC device
FR2676870A1 (fr) * 1991-05-24 1992-11-27 Sgs Thomson Microelectronics Structure de protection dans un circuit cmos contre le verrouillage.
JPH05109990A (ja) * 1991-10-15 1993-04-30 Nec Corp 半導体集積回路装置

Also Published As

Publication number Publication date
JPH0315824B2 (enExample) 1991-03-04

Similar Documents

Publication Publication Date Title
CN1076874C (zh) 静电放电保护电路
US6399990B1 (en) Isolated well ESD device
US6538266B2 (en) Protection device with a silicon-controlled rectifier
EP0324185B1 (en) Input protecting circuit in use with a MOS semiconductor device
US5844280A (en) Device for protecting a semiconductor circuit
US6570226B1 (en) Device and circuit for electrostatic discharge and overvoltage protection applications
US5986307A (en) Silicon-controlled rectifier integral with output buffer
JP2626229B2 (ja) 半導体入力保護装置
US5962876A (en) Low voltage triggering electrostatic discharge protection circuit
JPS6271275A (ja) 半導体集積回路
JPH03272180A (ja) 半導体集積回路
KR20190133349A (ko) Esd 보호를 위한 반도체 장치
EP0253105A1 (en) Integrated circuit with improved protective device
US5945714A (en) Lateral silicon-controlled rectifier for electrostatic discharge protection
US5949634A (en) Electrostatic discharge protection circuit triggered by MOS transistor
JP2965264B2 (ja) 低電圧でトリガされるスナップバック装置
JP3459308B2 (ja) Ｅｓｄ入力保護装置
JP2004319696A (ja) 半導体装置
JPS6269661A (ja) 半導体集積回路の保護回路
JP3479012B2 (ja) 静電保護回路及び半導体装置
JP3314760B2 (ja) 静電保護素子、静電保護回路及び半導体装置
US5521413A (en) Semiconductor device having a solid metal wiring with a contact portion for improved protection
JPH06244371A (ja) 半導体装置
JPH10200057A (ja) 静電破壊防止装置
JP3425574B2 (ja) 半導体集積回路の入出力保護装置

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term