JPS626683Y2 - - Google Patents
Info
- Publication number
- JPS626683Y2 JPS626683Y2 JP14857380U JP14857380U JPS626683Y2 JP S626683 Y2 JPS626683 Y2 JP S626683Y2 JP 14857380 U JP14857380 U JP 14857380U JP 14857380 U JP14857380 U JP 14857380U JP S626683 Y2 JPS626683 Y2 JP S626683Y2
- Authority
- JP
- Japan
- Prior art keywords
- wafers
- preheater
- susceptor
- reaction tube
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 235000012431 wafers Nutrition 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 11
- 239000012495 reaction gas Substances 0.000 claims description 6
- 238000001947 vapour-phase growth Methods 0.000 claims description 2
- 239000013078 crystal Substances 0.000 description 6
- 239000010453 quartz Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14857380U JPS626683Y2 (enExample) | 1980-10-17 | 1980-10-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14857380U JPS626683Y2 (enExample) | 1980-10-17 | 1980-10-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5771335U JPS5771335U (enExample) | 1982-04-30 |
| JPS626683Y2 true JPS626683Y2 (enExample) | 1987-02-16 |
Family
ID=29508004
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14857380U Expired JPS626683Y2 (enExample) | 1980-10-17 | 1980-10-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS626683Y2 (enExample) |
-
1980
- 1980-10-17 JP JP14857380U patent/JPS626683Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5771335U (enExample) | 1982-04-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3854443A (en) | Gas reactor for depositing thin films | |
| JPH05166741A (ja) | 熱処理装置用基板支持具 | |
| JPS626683Y2 (enExample) | ||
| JPS6112880B2 (enExample) | ||
| CN116288696A (zh) | 一种形成外延层的方法 | |
| JPS5881437A (ja) | 気相成長装置 | |
| JPS5932123A (ja) | 気相成長法 | |
| JPH08250429A (ja) | 半導体の気相成長方法及び装置 | |
| JPH02217388A (ja) | 単結晶製造方法 | |
| JPH0888187A (ja) | 半導体の気相成長装置及び方法 | |
| JPS607378B2 (ja) | Ｃｖｄ装置 | |
| JPS6058613A (ja) | エピタキシャル装置 | |
| JPS6159279B2 (enExample) | ||
| JPS598698A (ja) | 縦型液相エピタキシヤル成長装置 | |
| JP2986112B2 (ja) | 熱処理装置 | |
| JPH0530350Y2 (enExample) | ||
| JPS6236280Y2 (enExample) | ||
| JPS5814945A (ja) | 気相成長装置 | |
| JPS61271822A (ja) | 連続式気相成長装置 | |
| JPH0750260A (ja) | 気相成長装置 | |
| JPH0356042Y2 (enExample) | ||
| JPS5877224A (ja) | 気相成長方法 | |
| JPS63151016A (ja) | 横型気相成長装置 | |
| JPH0329333Y2 (enExample) | ||
| JPS61112315A (ja) | 気相成長装置 |