JPS626649B2 - - Google Patents
Info
- Publication number
- JPS626649B2 JPS626649B2 JP55003365A JP336580A JPS626649B2 JP S626649 B2 JPS626649 B2 JP S626649B2 JP 55003365 A JP55003365 A JP 55003365A JP 336580 A JP336580 A JP 336580A JP S626649 B2 JPS626649 B2 JP S626649B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode wiring
- ion
- ion implantation
- implanted
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP336580A JPS56100427A (en) | 1980-01-16 | 1980-01-16 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP336580A JPS56100427A (en) | 1980-01-16 | 1980-01-16 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56100427A JPS56100427A (en) | 1981-08-12 |
| JPS626649B2 true JPS626649B2 (enrdf_load_stackoverflow) | 1987-02-12 |
Family
ID=11555312
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP336580A Granted JPS56100427A (en) | 1980-01-16 | 1980-01-16 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56100427A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6384024A (ja) * | 1986-09-26 | 1988-04-14 | Seiko Epson Corp | 半導体装置の製造方法 |
| JP5187771B2 (ja) * | 2009-12-11 | 2013-04-24 | 株式会社日本製鋼所 | 半導体基板の製造方法およびレーザアニール装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51130184A (en) * | 1975-05-06 | 1976-11-12 | Matsushita Electric Ind Co Ltd | Semiconductor ic resistance element process |
| JPS5691460A (en) * | 1979-12-25 | 1981-07-24 | Seiko Epson Corp | Manufacturing of dispersion layer resistor |
-
1980
- 1980-01-16 JP JP336580A patent/JPS56100427A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56100427A (en) | 1981-08-12 |
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