JPS6259912B2 - - Google Patents
Info
- Publication number
- JPS6259912B2 JPS6259912B2 JP3840382A JP3840382A JPS6259912B2 JP S6259912 B2 JPS6259912 B2 JP S6259912B2 JP 3840382 A JP3840382 A JP 3840382A JP 3840382 A JP3840382 A JP 3840382A JP S6259912 B2 JPS6259912 B2 JP S6259912B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- receiving element
- emitting element
- wavelength
- optical sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000003287 optical effect Effects 0.000 claims description 18
- 239000000126 substance Substances 0.000 claims description 16
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000001514 detection method Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000006096 absorbing agent Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geophysics And Detection Of Objects (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57038403A JPS58155778A (ja) | 1982-03-10 | 1982-03-10 | 光センサ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57038403A JPS58155778A (ja) | 1982-03-10 | 1982-03-10 | 光センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58155778A JPS58155778A (ja) | 1983-09-16 |
JPS6259912B2 true JPS6259912B2 (ru) | 1987-12-14 |
Family
ID=12524324
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57038403A Granted JPS58155778A (ja) | 1982-03-10 | 1982-03-10 | 光センサ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58155778A (ru) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60262435A (ja) * | 1984-06-08 | 1985-12-25 | Nec Kyushu Ltd | 半導体組立装置におけるボンデイングワイヤ−供給装置 |
ATE77483T1 (de) * | 1986-04-23 | 1992-07-15 | Avl Medical Instr Ag | Sensorelement zur bestimmung von stoffkonzentrationen. |
US8981280B2 (en) | 2009-08-03 | 2015-03-17 | Illinois Tool Works Inc. | Optical interruption sensor with opposed light emitting diodes |
-
1982
- 1982-03-10 JP JP57038403A patent/JPS58155778A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58155778A (ja) | 1983-09-16 |
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