JPS6259912B2 - - Google Patents

Info

Publication number
JPS6259912B2
JPS6259912B2 JP3840382A JP3840382A JPS6259912B2 JP S6259912 B2 JPS6259912 B2 JP S6259912B2 JP 3840382 A JP3840382 A JP 3840382A JP 3840382 A JP3840382 A JP 3840382A JP S6259912 B2 JPS6259912 B2 JP S6259912B2
Authority
JP
Japan
Prior art keywords
light
receiving element
emitting element
wavelength
optical sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP3840382A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58155778A (ja
Inventor
Toshimi Ookubo
Takashi Kubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP57038403A priority Critical patent/JPS58155778A/ja
Publication of JPS58155778A publication Critical patent/JPS58155778A/ja
Publication of JPS6259912B2 publication Critical patent/JPS6259912B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/16Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
    • H01L31/167Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geophysics And Detection Of Objects (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
JP57038403A 1982-03-10 1982-03-10 光センサ Granted JPS58155778A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57038403A JPS58155778A (ja) 1982-03-10 1982-03-10 光センサ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57038403A JPS58155778A (ja) 1982-03-10 1982-03-10 光センサ

Publications (2)

Publication Number Publication Date
JPS58155778A JPS58155778A (ja) 1983-09-16
JPS6259912B2 true JPS6259912B2 (ru) 1987-12-14

Family

ID=12524324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57038403A Granted JPS58155778A (ja) 1982-03-10 1982-03-10 光センサ

Country Status (1)

Country Link
JP (1) JPS58155778A (ru)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60262435A (ja) * 1984-06-08 1985-12-25 Nec Kyushu Ltd 半導体組立装置におけるボンデイングワイヤ−供給装置
ATE77483T1 (de) * 1986-04-23 1992-07-15 Avl Medical Instr Ag Sensorelement zur bestimmung von stoffkonzentrationen.
US8981280B2 (en) 2009-08-03 2015-03-17 Illinois Tool Works Inc. Optical interruption sensor with opposed light emitting diodes

Also Published As

Publication number Publication date
JPS58155778A (ja) 1983-09-16

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