JPS6259467B2 - - Google Patents
Info
- Publication number
- JPS6259467B2 JPS6259467B2 JP53068513A JP6851378A JPS6259467B2 JP S6259467 B2 JPS6259467 B2 JP S6259467B2 JP 53068513 A JP53068513 A JP 53068513A JP 6851378 A JP6851378 A JP 6851378A JP S6259467 B2 JPS6259467 B2 JP S6259467B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- molybdenum
- film
- phosphorus
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 64
- 239000000758 substrate Substances 0.000 claims description 44
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 31
- 229910052750 molybdenum Inorganic materials 0.000 claims description 29
- 239000011733 molybdenum Substances 0.000 claims description 29
- 229910052698 phosphorus Inorganic materials 0.000 claims description 29
- 239000011574 phosphorus Substances 0.000 claims description 29
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 26
- 150000002500 ions Chemical class 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 30
- 238000000034 method Methods 0.000 description 28
- 239000010410 layer Substances 0.000 description 23
- 235000012239 silicon dioxide Nutrition 0.000 description 15
- 239000000377 silicon dioxide Substances 0.000 description 15
- 238000004544 sputter deposition Methods 0.000 description 15
- 239000011734 sodium Substances 0.000 description 10
- 239000000356 contaminant Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 239000005368 silicate glass Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 239000000460 chlorine Substances 0.000 description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 5
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 229910052708 sodium Inorganic materials 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- -1 sodium (Na + ) ions Chemical class 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003344 environmental pollutant Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 231100000719 pollutant Toxicity 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- AOPJVJYWEDDOBI-UHFFFAOYSA-N azanylidynephosphane Chemical compound P#N AOPJVJYWEDDOBI-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6851378A JPS54159186A (en) | 1978-06-07 | 1978-06-07 | Semiconductor device |
| NL7902247A NL7902247A (nl) | 1978-03-25 | 1979-03-22 | Metaal-isolator-halfgeleidertype halfgeleiderinrich- ting en werkwijze voor het vervaardigen ervan. |
| DE2911484A DE2911484C2 (de) | 1978-03-25 | 1979-03-23 | Metall-Isolator-Halbleiterbauelement |
| US06/023,460 US4270136A (en) | 1978-03-25 | 1979-03-23 | MIS Device having a metal and insulating layer containing at least one cation-trapping element |
| US06/217,689 US4349395A (en) | 1978-03-25 | 1980-12-18 | Method for producing MOS semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6851378A JPS54159186A (en) | 1978-06-07 | 1978-06-07 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54159186A JPS54159186A (en) | 1979-12-15 |
| JPS6259467B2 true JPS6259467B2 (US20110009641A1-20110113-C00185.png) | 1987-12-11 |
Family
ID=13375864
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6851378A Granted JPS54159186A (en) | 1978-03-25 | 1978-06-07 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS54159186A (US20110009641A1-20110113-C00185.png) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0453736Y2 (US20110009641A1-20110113-C00185.png) * | 1988-05-10 | 1992-12-17 | ||
| JPH0677642U (ja) * | 1993-04-22 | 1994-11-01 | 深井 健二 | 膝掛け構造 |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57153449A (en) * | 1981-03-17 | 1982-09-22 | Nec Corp | Integrated circuit device |
| JPS57162444A (en) * | 1981-03-31 | 1982-10-06 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS61140177A (ja) * | 1984-12-13 | 1986-06-27 | Nippon Precision Saakitsutsu Kk | 半導体装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5260080A (en) * | 1975-11-12 | 1977-05-18 | Nec Corp | Semiconductor device |
-
1978
- 1978-06-07 JP JP6851378A patent/JPS54159186A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5260080A (en) * | 1975-11-12 | 1977-05-18 | Nec Corp | Semiconductor device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0453736Y2 (US20110009641A1-20110113-C00185.png) * | 1988-05-10 | 1992-12-17 | ||
| JPH0677642U (ja) * | 1993-04-22 | 1994-11-01 | 深井 健二 | 膝掛け構造 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS54159186A (en) | 1979-12-15 |
