JPS6259465B2 - - Google Patents
Info
- Publication number
- JPS6259465B2 JPS6259465B2 JP15239776A JP15239776A JPS6259465B2 JP S6259465 B2 JPS6259465 B2 JP S6259465B2 JP 15239776 A JP15239776 A JP 15239776A JP 15239776 A JP15239776 A JP 15239776A JP S6259465 B2 JPS6259465 B2 JP S6259465B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- film
- collector
- forming
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000005468 ion implantation Methods 0.000 claims description 10
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 17
- 238000009826 distribution Methods 0.000 description 16
- 239000012535 impurity Substances 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 9
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- -1 arsenic ions Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15239776A JPS5376672A (en) | 1976-12-17 | 1976-12-17 | Simiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15239776A JPS5376672A (en) | 1976-12-17 | 1976-12-17 | Simiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5376672A JPS5376672A (en) | 1978-07-07 |
| JPS6259465B2 true JPS6259465B2 (de) | 1987-12-11 |
Family
ID=15539612
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15239776A Granted JPS5376672A (en) | 1976-12-17 | 1976-12-17 | Simiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5376672A (de) |
-
1976
- 1976-12-17 JP JP15239776A patent/JPS5376672A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5376672A (en) | 1978-07-07 |
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