JPS6259464B2 - - Google Patents
Info
- Publication number
- JPS6259464B2 JPS6259464B2 JP52056716A JP5671677A JPS6259464B2 JP S6259464 B2 JPS6259464 B2 JP S6259464B2 JP 52056716 A JP52056716 A JP 52056716A JP 5671677 A JP5671677 A JP 5671677A JP S6259464 B2 JPS6259464 B2 JP S6259464B2
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- pull
- well
- fet
- effect transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
- H10D84/858—Complementary IGFETs, e.g. CMOS comprising a P-type well but not an N-type well
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5671677A JPS53141587A (en) | 1977-05-16 | 1977-05-16 | Complementary field effect semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5671677A JPS53141587A (en) | 1977-05-16 | 1977-05-16 | Complementary field effect semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53141587A JPS53141587A (en) | 1978-12-09 |
| JPS6259464B2 true JPS6259464B2 (enrdf_load_stackoverflow) | 1987-12-11 |
Family
ID=13035198
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5671677A Granted JPS53141587A (en) | 1977-05-16 | 1977-05-16 | Complementary field effect semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53141587A (enrdf_load_stackoverflow) |
-
1977
- 1977-05-16 JP JP5671677A patent/JPS53141587A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53141587A (en) | 1978-12-09 |
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