JPS6258541B2 - - Google Patents
Info
- Publication number
- JPS6258541B2 JPS6258541B2 JP7168281A JP7168281A JPS6258541B2 JP S6258541 B2 JPS6258541 B2 JP S6258541B2 JP 7168281 A JP7168281 A JP 7168281A JP 7168281 A JP7168281 A JP 7168281A JP S6258541 B2 JPS6258541 B2 JP S6258541B2
- Authority
- JP
- Japan
- Prior art keywords
- type semiconductor
- electrostatic chuck
- semiconductor region
- insulating film
- semiconductor regions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000002184 metal Substances 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Jigs For Machine Tools (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7168281A JPS57187947A (en) | 1981-05-13 | 1981-05-13 | Electrostatic chuck |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7168281A JPS57187947A (en) | 1981-05-13 | 1981-05-13 | Electrostatic chuck |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57187947A JPS57187947A (en) | 1982-11-18 |
| JPS6258541B2 true JPS6258541B2 (fr) | 1987-12-07 |
Family
ID=13467573
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7168281A Granted JPS57187947A (en) | 1981-05-13 | 1981-05-13 | Electrostatic chuck |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57187947A (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20190255450A1 (en) * | 2018-02-22 | 2019-08-22 | Tomy Company, Ltd. | Spinning top toy |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5950537A (ja) * | 1982-09-17 | 1984-03-23 | Hitachi Ltd | ウエハチヤツク |
| JPS60130006U (ja) * | 1984-02-08 | 1985-08-31 | 株式会社 平安鉄工所 | 座標読取機 |
| US5600530A (en) * | 1992-08-04 | 1997-02-04 | The Morgan Crucible Company Plc | Electrostatic chuck |
| WO2008051369A2 (fr) * | 2006-10-25 | 2008-05-02 | Axcelis Technologies, Inc. | Bride électrostatique de fixation bon marché avec durée rapide de suppression de fixation |
-
1981
- 1981-05-13 JP JP7168281A patent/JPS57187947A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20190255450A1 (en) * | 2018-02-22 | 2019-08-22 | Tomy Company, Ltd. | Spinning top toy |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57187947A (en) | 1982-11-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3922705A (en) | Dielectrically isolated integral silicon diaphram or other semiconductor product | |
| US5656512A (en) | Method of manufacturing a semiconductor accelerometer | |
| GB2128400A (en) | Isolation and wiring of a semiconductor integrated circuit device and method of manufacturing the same | |
| CA1154543A (fr) | Fet de puissance v-mos a grille maillee | |
| JPS6258541B2 (fr) | ||
| US3453722A (en) | Method for the fabrication of integrated circuits | |
| JP2763107B2 (ja) | 誘電体分離半導体基板およびその製造方法 | |
| JP3099446B2 (ja) | 誘電体分離領域を有する半導体基板 | |
| CA1059647A (fr) | Mode de fabrication de substrat separe a isolant dielectrique pour circuits integres a semiconducteurs | |
| JPH05152427A (ja) | 半導体装置の製造方法 | |
| JPS6387762A (ja) | 半導体装置の製造方法 | |
| GB2072945A (en) | Fabricating semiconductor devices | |
| JP3016177B2 (ja) | 半導体センサにおける波状支持部材の製造方法 | |
| JPS61135136A (ja) | 半導体装置の製造方法 | |
| KR100253586B1 (ko) | 반도체 소자의 셀 애퍼처 마스크 제작방법 | |
| JP2704054B2 (ja) | 層間絶縁膜の検査方法 | |
| JPS6134971A (ja) | 半導体装置 | |
| JP2947782B1 (ja) | 薄膜シリコンの固定装置 | |
| JPH0491453A (ja) | 半導体装置 | |
| JPS59105339A (ja) | 半導体装置の製造方法 | |
| JPS6142144A (ja) | 半導体装置の製造方法 | |
| JPS60257182A (ja) | 半導体装置の製造方法 | |
| JPS62112359A (ja) | 半導体装置の製造方法 | |
| JPS62173739A (ja) | 半導体装置 | |
| JPS60182737A (ja) | 半導体装置の製造方法 |