JPS6258456B2 - - Google Patents
Info
- Publication number
- JPS6258456B2 JPS6258456B2 JP56146143A JP14614381A JPS6258456B2 JP S6258456 B2 JPS6258456 B2 JP S6258456B2 JP 56146143 A JP56146143 A JP 56146143A JP 14614381 A JP14614381 A JP 14614381A JP S6258456 B2 JPS6258456 B2 JP S6258456B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- humidity sensor
- polysilicon
- forming
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 29
- 229920005591 polysilicon Polymers 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 19
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- -1 phosphorus ions Chemical class 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 229910052698 phosphorus Inorganic materials 0.000 claims description 10
- 239000011574 phosphorus Substances 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 2
- 238000000151 deposition Methods 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 33
- 238000001259 photo etching Methods 0.000 description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 9
- 229910052750 molybdenum Inorganic materials 0.000 description 9
- 239000011733 molybdenum Substances 0.000 description 9
- 239000010931 gold Substances 0.000 description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- KWGKDLIKAYFUFQ-UHFFFAOYSA-M lithium chloride Chemical compound [Li+].[Cl-] KWGKDLIKAYFUFQ-UHFFFAOYSA-M 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
- G01N27/121—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid for determining moisture content, e.g. humidity, of the fluid
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Non-Adjustable Resistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56146143A JPS5848840A (ja) | 1981-09-18 | 1981-09-18 | 電気抵抗式湿度センサ及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56146143A JPS5848840A (ja) | 1981-09-18 | 1981-09-18 | 電気抵抗式湿度センサ及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5848840A JPS5848840A (ja) | 1983-03-22 |
| JPS6258456B2 true JPS6258456B2 (zh) | 1987-12-05 |
Family
ID=15401107
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56146143A Granted JPS5848840A (ja) | 1981-09-18 | 1981-09-18 | 電気抵抗式湿度センサ及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5848840A (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0363148U (zh) * | 1989-10-26 | 1991-06-20 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61148871A (ja) * | 1984-12-21 | 1986-07-07 | Nok Corp | 耐食性櫛形電極 |
| US11231384B2 (en) * | 2018-04-02 | 2022-01-25 | Bioconn Corporation | Humidity sensor |
-
1981
- 1981-09-18 JP JP56146143A patent/JPS5848840A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0363148U (zh) * | 1989-10-26 | 1991-06-20 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5848840A (ja) | 1983-03-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR100812996B1 (ko) | 마이크로 가스 센서 및 그 제조방법 | |
| JP3542614B2 (ja) | 温度センサおよび該温度センサの製造方法 | |
| JP4212667B2 (ja) | 圧力センサおよび電気化学的センサを組み合わせたセンサの製造方法 | |
| US20070062812A1 (en) | Gas sensor and method for the production thereof | |
| Cane et al. | Microtechnologies for pH ISFET chemical sensors | |
| Dibbern | A substrate for thin-film gas sensors in microelectronic technology | |
| JP4936677B2 (ja) | スマートセンサーおよびスマートセンサーの製造方法 | |
| JP3355127B2 (ja) | 熱式空気流量センサ | |
| US7157054B2 (en) | Membrane type gas sensor and method for manufacturing membrane type gas sensor | |
| JPH08152356A (ja) | 赤外線センサ | |
| JP2000121472A (ja) | 静電容量式圧力センサ | |
| JP3551527B2 (ja) | 半導体感歪センサの製造方法 | |
| CN110494744A (zh) | 湿度传感器 | |
| US20030037590A1 (en) | Method of self-testing a semiconductor chemical gas sensor including an embedded temperature sensor | |
| JPH0590011A (ja) | 感温抵抗体及びその製造方法 | |
| JP4497165B2 (ja) | 半導体装置の製造方法 | |
| JPS6258456B2 (zh) | ||
| US4780428A (en) | Mosfet semiconductor device and manufacturing method thereof | |
| JP2850558B2 (ja) | 半導体圧力センサおよびその製造方法 | |
| Stoev et al. | An integrated gas sensor on silicon substrate with sensitive SnOx layer | |
| JP2002009274A (ja) | 化学ｃｃｄセンサ | |
| JPH0578950B2 (zh) | ||
| JPH0113056B2 (zh) | ||
| EP0099808A2 (en) | Integrated photo-responsive metal oxide semiconductor circuit | |
| JPH05175428A (ja) | 集積回路装置 |