JPS6258157B2 - - Google Patents
Info
- Publication number
- JPS6258157B2 JPS6258157B2 JP58173668A JP17366883A JPS6258157B2 JP S6258157 B2 JPS6258157 B2 JP S6258157B2 JP 58173668 A JP58173668 A JP 58173668A JP 17366883 A JP17366883 A JP 17366883A JP S6258157 B2 JPS6258157 B2 JP S6258157B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- superconductor
- josephson junction
- grain boundary
- line width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/10—Junction-based devices
- H10N60/12—Josephson-effect devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/825—Apparatus per se, device per se, or process of making or operating same
- Y10S505/873—Active solid-state device
- Y10S505/874—Active solid-state device with josephson junction, e.g. squid
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58173668A JPS6065582A (ja) | 1983-09-20 | 1983-09-20 | 粒界ジヨセフソン接合型光検出素子 |
| GB08423202A GB2148646B (en) | 1983-09-20 | 1984-09-14 | Photodetecting device |
| US06/651,069 US4578691A (en) | 1983-09-20 | 1984-09-14 | Photodetecting device |
| FR848414363A FR2552267B1 (fr) | 1983-09-20 | 1984-09-19 | Dispositif de photodetection a jonctions josephson |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58173668A JPS6065582A (ja) | 1983-09-20 | 1983-09-20 | 粒界ジヨセフソン接合型光検出素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6065582A JPS6065582A (ja) | 1985-04-15 |
| JPS6258157B2 true JPS6258157B2 (cg-RX-API-DMAC7.html) | 1987-12-04 |
Family
ID=15964880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58173668A Granted JPS6065582A (ja) | 1983-09-20 | 1983-09-20 | 粒界ジヨセフソン接合型光検出素子 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4578691A (cg-RX-API-DMAC7.html) |
| JP (1) | JPS6065582A (cg-RX-API-DMAC7.html) |
| FR (1) | FR2552267B1 (cg-RX-API-DMAC7.html) |
| GB (1) | GB2148646B (cg-RX-API-DMAC7.html) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2624690B2 (ja) * | 1987-07-03 | 1997-06-25 | 株式会社日立製作所 | 酸化物超電導装置およびその製造方法 |
| DE3884514T2 (de) * | 1987-07-29 | 1994-02-10 | Sharp Kk | Verfahren und Anordnung zum Nachweisen eines Magnetfeldes mittels der Magneto-widerstandseigenschaften eines supraleitenden Materials. |
| US5126667A (en) * | 1987-12-25 | 1992-06-30 | Sharp Kabushiki Kaisha | Superconductive magneto-resistive device for sensing an external magnetic field |
| DE68906044T2 (de) * | 1988-02-10 | 1993-11-04 | Sharp Kk | Supraleitende logische vorrichtung. |
| US4990487A (en) * | 1988-03-11 | 1991-02-05 | The University Of Tokyo | Superconductive optoelectronic devices |
| US5041880A (en) * | 1988-06-16 | 1991-08-20 | Sharp Kabushiki Kaisha | Logic device and memory device using ceramic superconducting element |
| US5065087A (en) * | 1988-10-04 | 1991-11-12 | Sharp Kabushiki Kaisha | Apparatus for observing a superconductive phenomenon in a superconductor |
| JPH03241781A (ja) * | 1990-02-19 | 1991-10-28 | Nippon Telegr & Teleph Corp <Ntt> | 粒界ジョセフソン接合 |
| US5331162A (en) * | 1991-11-22 | 1994-07-19 | Trw Inc. | Sensitive, low-noise superconducting infrared photodetector |
| US5600172A (en) * | 1993-03-31 | 1997-02-04 | Electric Power Research Institute | Hybrid, dye antenna/thin film superconductor devices and methods of tuned photo-responsive control thereof |
| US6239431B1 (en) | 1998-11-24 | 2001-05-29 | The United States Of America As Represented By The Secretary Of Commerce | Superconducting transition-edge sensor with weak links |
| US7087179B2 (en) * | 2000-12-11 | 2006-08-08 | Applied Materials, Inc. | Optical integrated circuits (ICs) |
| US7079740B2 (en) * | 2004-03-12 | 2006-07-18 | Applied Materials, Inc. | Use of amorphous carbon film as a hardmask in the fabrication of optical waveguides |
| US8571614B1 (en) | 2009-10-12 | 2013-10-29 | Hypres, Inc. | Low-power biasing networks for superconducting integrated circuits |
| JP6475523B2 (ja) * | 2015-03-13 | 2019-02-27 | 日本信号株式会社 | 制御回路及び検出器 |
| US10222416B1 (en) | 2015-04-14 | 2019-03-05 | Hypres, Inc. | System and method for array diagnostics in superconducting integrated circuit |
| US11101215B2 (en) * | 2018-09-19 | 2021-08-24 | PsiQuantum Corp. | Tapered connectors for superconductor circuits |
| US11563162B2 (en) * | 2020-01-09 | 2023-01-24 | International Business Machines Corporation | Epitaxial Josephson junction transmon device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3335363A (en) * | 1964-06-18 | 1967-08-08 | Bell Telephone Labor Inc | Superconductive device of varying dimension having a minimum dimension intermediate its electrodes |
| GB1196788A (en) * | 1967-11-28 | 1970-07-01 | Mullard Ltd | Josephson Junctions. |
| US3906231A (en) * | 1974-03-19 | 1975-09-16 | Nasa | Doped Josephson tunneling junction for use in a sensitive IR detector |
| US4316785A (en) * | 1979-11-05 | 1982-02-23 | Nippon Telegraph & Telephone Public Corporation | Oxide superconductor Josephson junction and fabrication method therefor |
| JPS602798B2 (ja) * | 1981-12-12 | 1985-01-23 | 日本電信電話株式会社 | 超伝導デバイス |
| JPS59210677A (ja) * | 1983-05-14 | 1984-11-29 | Nippon Telegr & Teleph Corp <Ntt> | ジヨセフソン接合を用いた光検出素子 |
-
1983
- 1983-09-20 JP JP58173668A patent/JPS6065582A/ja active Granted
-
1984
- 1984-09-14 GB GB08423202A patent/GB2148646B/en not_active Expired
- 1984-09-14 US US06/651,069 patent/US4578691A/en not_active Expired - Lifetime
- 1984-09-19 FR FR848414363A patent/FR2552267B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB2148646A (en) | 1985-05-30 |
| GB8423202D0 (en) | 1984-10-17 |
| FR2552267B1 (fr) | 1989-06-30 |
| US4578691A (en) | 1986-03-25 |
| FR2552267A1 (fr) | 1985-03-22 |
| JPS6065582A (ja) | 1985-04-15 |
| GB2148646B (en) | 1986-11-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6258157B2 (cg-RX-API-DMAC7.html) | ||
| US4521682A (en) | Photodetecting device having Josephson junctions | |
| US4343768A (en) | Gas detector | |
| Nahum et al. | Ultrasensitive‐hot‐electron microbolometer | |
| US5367167A (en) | Uncooled infrared detector and method for forming the same | |
| JP2706029B2 (ja) | p−i−nダイオード | |
| TW200537079A (en) | Ultraviolet sensor and method for manufacturing the same | |
| JP2786151B2 (ja) | 酸化バナジウム薄膜及びそれを用いたボロメータ型赤外線センサ | |
| Krchnavek et al. | Transport in reversibly laser‐modified YBa2Cu3O7− x superconducting thin films | |
| US4941029A (en) | High resistance optical shield for visible sensors | |
| EP1161660B1 (en) | Bolometer with a zinc oxide bolometer element | |
| JPS6065581A (ja) | 透明超伝導体電極型光検出素子 | |
| US5121173A (en) | Proximity effect very long wavlength infrared (VLWIR) radiation detector | |
| US4170781A (en) | Photodiode and method of manufacture | |
| JPS6359271B2 (cg-RX-API-DMAC7.html) | ||
| JPS6370581A (ja) | 超伝導トンネル接合光検出器及びその製造方法 | |
| US3082392A (en) | Composite infrared radiation detector | |
| EP1131612B1 (en) | Bolometer including an absorber made of a material having a low deposition-temperature and a low heat-conductivity | |
| JPH065790B2 (ja) | 超伝導トンネル接合光検出器 | |
| Otto et al. | An array of 100 Al–Al2O3–Cu SIN tunnel junctions in direct-write trilayer technology | |
| JPH02206733A (ja) | 赤外線センサ | |
| JPH05102499A (ja) | 赤外光検出素子および赤外光検出器 | |
| JP2715321B2 (ja) | 光検出器 | |
| Das et al. | Design and fabrication of low power polysilicon sources | |
| JP2737006B2 (ja) | 信号検出器 |