JPS6257270B2 - - Google Patents
Info
- Publication number
- JPS6257270B2 JPS6257270B2 JP57044922A JP4492282A JPS6257270B2 JP S6257270 B2 JPS6257270 B2 JP S6257270B2 JP 57044922 A JP57044922 A JP 57044922A JP 4492282 A JP4492282 A JP 4492282A JP S6257270 B2 JPS6257270 B2 JP S6257270B2
- Authority
- JP
- Japan
- Prior art keywords
- reaction chamber
- substrate
- gas
- type layer
- amorphous silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 38
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 27
- 239000002994 raw material Substances 0.000 claims description 17
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 9
- 239000007789 gas Substances 0.000 description 48
- 238000000151 deposition Methods 0.000 description 13
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 9
- 230000005684 electric field Effects 0.000 description 9
- 229910000077 silane Inorganic materials 0.000 description 9
- 230000008021 deposition Effects 0.000 description 7
- 239000010408 film Substances 0.000 description 7
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010926 purge Methods 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57044922A JPS58169980A (ja) | 1982-03-19 | 1982-03-19 | 光起電力素子の製造方法 |
US06/476,707 US4492605A (en) | 1982-03-19 | 1983-03-18 | Method of making photovoltaic device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57044922A JPS58169980A (ja) | 1982-03-19 | 1982-03-19 | 光起電力素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58169980A JPS58169980A (ja) | 1983-10-06 |
JPS6257270B2 true JPS6257270B2 (US20100012521A1-20100121-C00001.png) | 1987-11-30 |
Family
ID=12704958
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57044922A Granted JPS58169980A (ja) | 1982-03-19 | 1982-03-19 | 光起電力素子の製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US4492605A (US20100012521A1-20100121-C00001.png) |
JP (1) | JPS58169980A (US20100012521A1-20100121-C00001.png) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60110176A (ja) * | 1983-11-21 | 1985-06-15 | Agency Of Ind Science & Technol | 太陽電池製造装置 |
US6784033B1 (en) | 1984-02-15 | 2004-08-31 | Semiconductor Energy Laboratory Co., Ltd. | Method for the manufacture of an insulated gate field effect semiconductor device |
US6113701A (en) | 1985-02-14 | 2000-09-05 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method, and system |
DE3685380D1 (de) * | 1985-07-29 | 1992-06-25 | Energy Conversion Devices Inc | Verfahren und vorrichtung zum kontinuierlichen niederschlagen von elektrischen isolatoren. |
US4719123A (en) * | 1985-08-05 | 1988-01-12 | Sanyo Electric Co., Ltd. | Method for fabricating periodically multilayered film |
KR910003169B1 (ko) * | 1985-11-12 | 1991-05-20 | 가부시끼가이샤 한도다이 에네르기 겐뀨소 | 반도체 장치 제조 방법 및 장치 |
US4845043A (en) * | 1987-04-23 | 1989-07-04 | Catalano Anthony W | Method for fabricating photovoltaic device having improved short wavelength photoresponse |
JPH01138765A (ja) * | 1987-11-26 | 1989-05-31 | Seiko Epson Corp | 光電変換装置の製造方法 |
JPH01212434A (ja) * | 1988-02-19 | 1989-08-25 | Sanyo Electric Co Ltd | 成膜方法 |
JPH02224221A (ja) * | 1989-02-27 | 1990-09-06 | Hitachi Ltd | 半導体装置製造方法、基板処理装置および半導体装置製造装置 |
DE4342463C2 (de) * | 1993-12-13 | 1997-03-27 | Leybold Ag | Verfahren und Vorrichtung zum Beschichten von optischen Linsen mit Schutzschichten und mit optischen Schichten im Vakuum |
US6287888B1 (en) | 1997-12-26 | 2001-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and process for producing photoelectric conversion device |
JP4293385B2 (ja) * | 1998-01-27 | 2009-07-08 | 株式会社半導体エネルギー研究所 | 光電変換装置の作製方法 |
US6515785B1 (en) * | 1999-04-22 | 2003-02-04 | 3M Innovative Properties Company | Optical devices using reflecting polarizing materials |
US20030044539A1 (en) * | 2001-02-06 | 2003-03-06 | Oswald Robert S. | Process for producing photovoltaic devices |
CN102656707B (zh) * | 2009-12-22 | 2015-04-01 | 东电电子太阳能股份公司 | 薄膜硅叠层太阳能电池及其制造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4015558A (en) * | 1972-12-04 | 1977-04-05 | Optical Coating Laboratory, Inc. | Vapor deposition apparatus |
JPS55125681A (en) * | 1979-03-22 | 1980-09-27 | Sanyo Electric Co Ltd | Manufacture of photovoltaic device |
JPS56114387A (en) * | 1980-02-13 | 1981-09-08 | Sanyo Electric Co Ltd | Manufacture of photovoltaic force element |
US4400409A (en) * | 1980-05-19 | 1983-08-23 | Energy Conversion Devices, Inc. | Method of making p-doped silicon films |
US4417092A (en) * | 1981-03-16 | 1983-11-22 | Exxon Research And Engineering Co. | Sputtered pin amorphous silicon semi-conductor device and method therefor |
-
1982
- 1982-03-19 JP JP57044922A patent/JPS58169980A/ja active Granted
-
1983
- 1983-03-18 US US06/476,707 patent/US4492605A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US4492605A (en) | 1985-01-08 |
JPS58169980A (ja) | 1983-10-06 |