JPS6257255B2 - - Google Patents
Info
- Publication number
- JPS6257255B2 JPS6257255B2 JP57101351A JP10135182A JPS6257255B2 JP S6257255 B2 JPS6257255 B2 JP S6257255B2 JP 57101351 A JP57101351 A JP 57101351A JP 10135182 A JP10135182 A JP 10135182A JP S6257255 B2 JPS6257255 B2 JP S6257255B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- mos
- field oxide
- voltage
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P74/00—
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57101351A JPS58219743A (ja) | 1982-06-15 | 1982-06-15 | Mos型半導体装置の試験方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57101351A JPS58219743A (ja) | 1982-06-15 | 1982-06-15 | Mos型半導体装置の試験方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58219743A JPS58219743A (ja) | 1983-12-21 |
| JPS6257255B2 true JPS6257255B2 (show.php) | 1987-11-30 |
Family
ID=14298410
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57101351A Granted JPS58219743A (ja) | 1982-06-15 | 1982-06-15 | Mos型半導体装置の試験方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58219743A (show.php) |
-
1982
- 1982-06-15 JP JP57101351A patent/JPS58219743A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58219743A (ja) | 1983-12-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6029230B2 (ja) | テスト構造体 | |
| US5739052A (en) | Apparatus and method for detecting defects in insulative layers of MOS active devices | |
| US6300647B1 (en) | Characteristic-evaluating storage capacitors | |
| JPH04199651A (ja) | 半導体装置およびその製造方法 | |
| CN115707981A (zh) | 器件电学性能的测试方法 | |
| JP4290316B2 (ja) | 配線ショート箇所の検査方法及び検査装置 | |
| JPS6257255B2 (show.php) | ||
| JPS6348185B2 (show.php) | ||
| JP2943399B2 (ja) | 半導体集積回路 | |
| JP2585556B2 (ja) | 半導体集積回路装置 | |
| US6677608B2 (en) | Semiconductor device for detecting gate defects | |
| JPH0587194B2 (show.php) | ||
| TW563220B (en) | Method for picking defected dielectric in semiconductor device | |
| KR20000045895A (ko) | 테스트패턴 형성방법 | |
| JP2571262B2 (ja) | 絶縁膜の欠陥の検出方法 | |
| JPS63122136A (ja) | 集積回路 | |
| KR100430419B1 (ko) | 반도체 소자의 전기적 특성 검사방법 | |
| JPS6167238A (ja) | 半導体装置 | |
| JP3250215B2 (ja) | プラズマ不均一性の評価方法及び評価装置 | |
| KR100265841B1 (ko) | 포토마스크를 이용한 반도체 소자의 공정 모니터 방법 | |
| JPH0766263A (ja) | 多層金属配線の接触抵抗測定方法並びに半導体装置及び半導体ウェハ | |
| JPH0645423A (ja) | 半導体装置の試験方法 | |
| JPS6118144A (ja) | 半導体デバイス測定装置 | |
| de Boer et al. | Wafer Tests of the Pixel Detectors for the Upgrade of the DELPHI Vertex Detector | |
| JPH07120695B2 (ja) | 半導体集積回路の検査装置および検査方法 |