JPS6256667B2 - - Google Patents
Info
- Publication number
- JPS6256667B2 JPS6256667B2 JP56109796A JP10979681A JPS6256667B2 JP S6256667 B2 JPS6256667 B2 JP S6256667B2 JP 56109796 A JP56109796 A JP 56109796A JP 10979681 A JP10979681 A JP 10979681A JP S6256667 B2 JPS6256667 B2 JP S6256667B2
- Authority
- JP
- Japan
- Prior art keywords
- diffusion region
- contact
- contact holes
- pair
- resistance value
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
- H10D1/43—Resistors having PN junctions
Landscapes
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56109796A JPS5810854A (ja) | 1981-07-13 | 1981-07-13 | 半導体拡散抵抗 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56109796A JPS5810854A (ja) | 1981-07-13 | 1981-07-13 | 半導体拡散抵抗 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5810854A JPS5810854A (ja) | 1983-01-21 |
| JPS6256667B2 true JPS6256667B2 (enExample) | 1987-11-26 |
Family
ID=14519432
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56109796A Granted JPS5810854A (ja) | 1981-07-13 | 1981-07-13 | 半導体拡散抵抗 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5810854A (enExample) |
-
1981
- 1981-07-13 JP JP56109796A patent/JPS5810854A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5810854A (ja) | 1983-01-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4697201A (en) | Power MOS FET with decreased resistance in the conducting state | |
| JPS6256667B2 (enExample) | ||
| JPH0231426A (ja) | バイポーラトランジスタ | |
| US5204735A (en) | High-frequency semiconductor device having emitter stabilizing resistor and method of manufacturing the same | |
| JP2504498B2 (ja) | 半導体装置 | |
| JPS59143358A (ja) | 半導体薄膜抵抗素子 | |
| JPS63229744A (ja) | 半導体装置 | |
| JPS61191061A (ja) | 半導体抵抗装置 | |
| JPH0556020B2 (enExample) | ||
| JPS61216356A (ja) | 半導体抵抗 | |
| JP2710356B2 (ja) | 半導体装置 | |
| JPH04361566A (ja) | 半導体集積回路 | |
| JPS593866B2 (ja) | ハンドウタイソウチノセイゾウホウホウ | |
| JPS5826177B2 (ja) | 半導体装置の製造方法 | |
| JPH01175768A (ja) | 半導体装置 | |
| JPS6148957A (ja) | Mosキヤパシタの製造方法 | |
| JPS59130473A (ja) | 半導体素子 | |
| JPS59139664A (ja) | 半導体集積回路装置 | |
| JPS6124827B2 (enExample) | ||
| JPS60143645A (ja) | 半導体装置 | |
| JPH0616545B2 (ja) | 半導体領域の形成方法 | |
| JPH03126229A (ja) | トランジスタ | |
| JPS63272065A (ja) | 半導体装置 | |
| JPH0385758A (ja) | 半導体抵抗器 | |
| JPH04130658A (ja) | 半導体装置用多結晶シリコン抵抗 |