JPH0556020B2 - - Google Patents
Info
- Publication number
- JPH0556020B2 JPH0556020B2 JP61194541A JP19454186A JPH0556020B2 JP H0556020 B2 JPH0556020 B2 JP H0556020B2 JP 61194541 A JP61194541 A JP 61194541A JP 19454186 A JP19454186 A JP 19454186A JP H0556020 B2 JPH0556020 B2 JP H0556020B2
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- polycrystalline silicon
- low
- region
- integrated circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19454186A JPS6350054A (ja) | 1986-08-19 | 1986-08-19 | 半導体集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19454186A JPS6350054A (ja) | 1986-08-19 | 1986-08-19 | 半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6350054A JPS6350054A (ja) | 1988-03-02 |
| JPH0556020B2 true JPH0556020B2 (enExample) | 1993-08-18 |
Family
ID=16326247
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19454186A Granted JPS6350054A (ja) | 1986-08-19 | 1986-08-19 | 半導体集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6350054A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5172211A (en) * | 1990-01-12 | 1992-12-15 | Paradigm Technology, Inc. | High resistance polysilicon load resistor |
| JP3124473B2 (ja) * | 1994-08-19 | 2001-01-15 | セイコーインスツルメンツ株式会社 | 半導体装置とその製造方法 |
| US6885280B2 (en) * | 2003-01-31 | 2005-04-26 | Fairchild Semiconductor Corporation | High value split poly p-resistor with low standard deviation |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58122769A (ja) * | 1982-01-18 | 1983-07-21 | Seiko Epson Corp | 半導体装置の製造方法 |
-
1986
- 1986-08-19 JP JP19454186A patent/JPS6350054A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6350054A (ja) | 1988-03-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5466638A (en) | Method of manufacturing a metal interconnect with high resistance to electromigration | |
| JPS63141349A (ja) | 集積半導体回路とその製造方法 | |
| JPH0654795B2 (ja) | 半導体集積回路装置及びその製造方法 | |
| US4883772A (en) | Process for making a self-aligned silicide shunt | |
| JPH0556020B2 (enExample) | ||
| JP2762473B2 (ja) | 半導体装置の製造方法 | |
| US5068710A (en) | Semiconductor device with multilayer base contact | |
| JPS609159A (ja) | 半導体装置 | |
| US5204735A (en) | High-frequency semiconductor device having emitter stabilizing resistor and method of manufacturing the same | |
| US7341958B2 (en) | Integrated process for thin film resistors with silicides | |
| US5336631A (en) | Method of making and trimming ballast resistors and barrier metal in microwave power transistors | |
| JP3372109B2 (ja) | 半導体装置 | |
| JPH0135505B2 (enExample) | ||
| JP2003045983A (ja) | 半導体装置及びその製造方法 | |
| JP3113202B2 (ja) | 半導体装置 | |
| KR920007784B1 (ko) | 에미터안정화저항을구비한고주파반도체장치및그제조방법 | |
| EP0264309B1 (en) | Self-aligned base shunt for transistor | |
| JPS63229744A (ja) | 半導体装置 | |
| JPS6259463B2 (enExample) | ||
| JPH05175428A (ja) | 集積回路装置 | |
| JPH0569312B2 (enExample) | ||
| JPH0436576B2 (enExample) | ||
| JPS6256667B2 (enExample) | ||
| JPH0366157A (ja) | 半導体集積回路装置 | |
| JPS6359259B2 (enExample) |