JPS6255700B2 - - Google Patents
Info
- Publication number
- JPS6255700B2 JPS6255700B2 JP8609578A JP8609578A JPS6255700B2 JP S6255700 B2 JPS6255700 B2 JP S6255700B2 JP 8609578 A JP8609578 A JP 8609578A JP 8609578 A JP8609578 A JP 8609578A JP S6255700 B2 JPS6255700 B2 JP S6255700B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- sputtering method
- insulator
- bias sputtering
- elements
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 13
- 238000004544 sputter deposition Methods 0.000 claims description 12
- 238000002955 isolation Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 3
- 239000011810 insulating material Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 239000012212 insulator Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000010354 integration Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000005669 field effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
Landscapes
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8609578A JPS5513904A (en) | 1978-07-17 | 1978-07-17 | Semiconductor device and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8609578A JPS5513904A (en) | 1978-07-17 | 1978-07-17 | Semiconductor device and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5513904A JPS5513904A (en) | 1980-01-31 |
| JPS6255700B2 true JPS6255700B2 (enrdf_load_stackoverflow) | 1987-11-20 |
Family
ID=13877141
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8609578A Granted JPS5513904A (en) | 1978-07-17 | 1978-07-17 | Semiconductor device and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5513904A (enrdf_load_stackoverflow) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4374011A (en) * | 1981-05-08 | 1983-02-15 | Fairchild Camera & Instrument Corp. | Process for fabricating non-encroaching planar insulating regions in integrated circuit structures |
| JPS583248A (ja) * | 1981-06-30 | 1983-01-10 | Toshiba Corp | バイポ−ラ型半導体装置の製造方法 |
| JPS6070741A (ja) * | 1983-09-26 | 1985-04-22 | Mitsubishi Electric Corp | 素子間分離方法 |
| JPS6294955A (ja) * | 1985-10-21 | 1987-05-01 | Nec Corp | 素子分離方法 |
| EP1898460B1 (en) * | 2005-06-28 | 2012-01-04 | Spansion LLC | Semiconductor device and fabrication method thereof |
-
1978
- 1978-07-17 JP JP8609578A patent/JPS5513904A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5513904A (en) | 1980-01-31 |
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