JPS5513904A - Semiconductor device and its manufacturing method - Google Patents
Semiconductor device and its manufacturing methodInfo
- Publication number
- JPS5513904A JPS5513904A JP8609578A JP8609578A JPS5513904A JP S5513904 A JPS5513904 A JP S5513904A JP 8609578 A JP8609578 A JP 8609578A JP 8609578 A JP8609578 A JP 8609578A JP S5513904 A JPS5513904 A JP S5513904A
- Authority
- JP
- Japan
- Prior art keywords
- insulator
- substrate
- concave portion
- sio
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000000992 sputter etching Methods 0.000 abstract 1
Landscapes
- Element Separation (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8609578A JPS5513904A (en) | 1978-07-17 | 1978-07-17 | Semiconductor device and its manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8609578A JPS5513904A (en) | 1978-07-17 | 1978-07-17 | Semiconductor device and its manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5513904A true JPS5513904A (en) | 1980-01-31 |
JPS6255700B2 JPS6255700B2 (enrdf_load_stackoverflow) | 1987-11-20 |
Family
ID=13877141
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8609578A Granted JPS5513904A (en) | 1978-07-17 | 1978-07-17 | Semiconductor device and its manufacturing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5513904A (enrdf_load_stackoverflow) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57193044A (en) * | 1981-05-08 | 1982-11-27 | Fairchild Camera Instr Co | Method of producing non-invasion type planar insulating region in integrated circuit structure |
JPS583248A (ja) * | 1981-06-30 | 1983-01-10 | Toshiba Corp | バイポ−ラ型半導体装置の製造方法 |
JPS6070741A (ja) * | 1983-09-26 | 1985-04-22 | Mitsubishi Electric Corp | 素子間分離方法 |
JPS6294955A (ja) * | 1985-10-21 | 1987-05-01 | Nec Corp | 素子分離方法 |
JPWO2007000808A1 (ja) * | 2005-06-28 | 2009-01-22 | スパンション エルエルシー | 半導体装置およびその製造方法 |
-
1978
- 1978-07-17 JP JP8609578A patent/JPS5513904A/ja active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57193044A (en) * | 1981-05-08 | 1982-11-27 | Fairchild Camera Instr Co | Method of producing non-invasion type planar insulating region in integrated circuit structure |
JPS583248A (ja) * | 1981-06-30 | 1983-01-10 | Toshiba Corp | バイポ−ラ型半導体装置の製造方法 |
JPS6070741A (ja) * | 1983-09-26 | 1985-04-22 | Mitsubishi Electric Corp | 素子間分離方法 |
JPS6294955A (ja) * | 1985-10-21 | 1987-05-01 | Nec Corp | 素子分離方法 |
JPWO2007000808A1 (ja) * | 2005-06-28 | 2009-01-22 | スパンション エルエルシー | 半導体装置およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS6255700B2 (enrdf_load_stackoverflow) | 1987-11-20 |
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