JPS6253951B2 - - Google Patents
Info
- Publication number
- JPS6253951B2 JPS6253951B2 JP56192218A JP19221881A JPS6253951B2 JP S6253951 B2 JPS6253951 B2 JP S6253951B2 JP 56192218 A JP56192218 A JP 56192218A JP 19221881 A JP19221881 A JP 19221881A JP S6253951 B2 JPS6253951 B2 JP S6253951B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- mos transistor
- mos
- transistor
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56192218A JPS5893372A (ja) | 1981-11-30 | 1981-11-30 | Ｍｏｓ型集積回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56192218A JPS5893372A (ja) | 1981-11-30 | 1981-11-30 | Ｍｏｓ型集積回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5893372A JPS5893372A (ja) | 1983-06-03 |
| JPS6253951B2 true JPS6253951B2 (enrdf_load_stackoverflow) | 1987-11-12 |
Family
ID=16287621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56192218A Granted JPS5893372A (ja) | 1981-11-30 | 1981-11-30 | Ｍｏｓ型集積回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5893372A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5166091A (en) * | 1991-05-31 | 1992-11-24 | At&T Bell Laboratories | Fabrication method in vertical integration |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56144530A (en) * | 1980-04-10 | 1981-11-10 | Fujitsu Ltd | Manufacture of semiconductor device |
-
1981
- 1981-11-30 JP JP56192218A patent/JPS5893372A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5893372A (ja) | 1983-06-03 |
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