JPS6253944B2 - - Google Patents

Info

Publication number
JPS6253944B2
JPS6253944B2 JP16500382A JP16500382A JPS6253944B2 JP S6253944 B2 JPS6253944 B2 JP S6253944B2 JP 16500382 A JP16500382 A JP 16500382A JP 16500382 A JP16500382 A JP 16500382A JP S6253944 B2 JPS6253944 B2 JP S6253944B2
Authority
JP
Japan
Prior art keywords
lifetime
light
graph
intersection
pulse width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP16500382A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5955013A (ja
Inventor
Akira Usami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP16500382A priority Critical patent/JPS5955013A/ja
Publication of JPS5955013A publication Critical patent/JPS5955013A/ja
Publication of JPS6253944B2 publication Critical patent/JPS6253944B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Toxicology (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP16500382A 1982-09-24 1982-09-24 半導体ウエ−ハの非接触測定法 Granted JPS5955013A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16500382A JPS5955013A (ja) 1982-09-24 1982-09-24 半導体ウエ−ハの非接触測定法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16500382A JPS5955013A (ja) 1982-09-24 1982-09-24 半導体ウエ−ハの非接触測定法

Publications (2)

Publication Number Publication Date
JPS5955013A JPS5955013A (ja) 1984-03-29
JPS6253944B2 true JPS6253944B2 (enrdf_load_stackoverflow) 1987-11-12

Family

ID=15803992

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16500382A Granted JPS5955013A (ja) 1982-09-24 1982-09-24 半導体ウエ−ハの非接触測定法

Country Status (1)

Country Link
JP (1) JPS5955013A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9239299B2 (en) 2010-02-15 2016-01-19 National University Corporation Tokyo University Of Agriculture And Technology Photoinduced carrier lifetime measuring method, light incidence efficiency measuring method, photoinduced carrier lifetime measuring device, and light incidence efficiency measuring device
JP5706776B2 (ja) * 2011-07-21 2015-04-22 株式会社半導体エネルギー研究所 半導体基板の評価方法
JP5590002B2 (ja) * 2011-10-12 2014-09-17 信越半導体株式会社 金属汚染評価方法及びエピタキシャルウェーハの製造方法
JP5846899B2 (ja) * 2011-12-23 2016-01-20 株式会社半導体エネルギー研究所 半導体基板の解析方法
JP6826007B2 (ja) * 2017-06-29 2021-02-03 京セラ株式会社 光誘起キャリアのバルクキャリアライフタイムの測定方法および測定装置
JP7249395B1 (ja) * 2021-11-10 2023-03-30 株式会社Sumco 半導体試料の評価方法、半導体試料の評価装置および半導体ウェーハの製造方法
WO2024176420A1 (ja) * 2023-02-24 2024-08-29 株式会社Sumco 半導体試料の評価方法、半導体試料の評価装置および半導体ウェーハの製造方法

Also Published As

Publication number Publication date
JPS5955013A (ja) 1984-03-29

Similar Documents

Publication Publication Date Title
US4949034A (en) Method for contactless evaluation of characteristics of semiconductor wafers and devices
US5025145A (en) Method and apparatus for determining the minority carrier diffusion length from linear constant photon flux photovoltage measurements
US9110127B2 (en) Apparatus and method for electrical characterization by selecting and adjusting the light for a target depth of a semiconductor
CN111128783A (zh) 一种少数载流子寿命的纵向分布测试系统和方法
US6653850B2 (en) Surface passivation method and arrangement for measuring the lifetime of minority carriers in semiconductors
JPS6253944B2 (enrdf_load_stackoverflow)
EP2538204B1 (en) Photoinduced carrier lifetime measuring method, light incidence efficiency measuring method, photoinduced carrier lifetime measuring device, and light incidence efficiency measuring device
US4755049A (en) Method and apparatus for measuring the ion implant dosage in a semiconductor crystal
JP3670051B2 (ja) 半導体試料のキャリアのライフタイム測定方法及びその装置
US5760594A (en) Contamination monitoring using capacitance measurements on MOS structures
JPS61101045A (ja) 半導体評価方法
JPH0964136A (ja) 半導体ウェーハの欠陥測定方法及び同装置
RU2009575C1 (ru) Способ бесконтактного определения характеристик кремниевых пластин с внутренним геттером
Wang et al. Use of microwave photoconductivity to measure semiconductor properties
HUP9902355A2 (hu) Nagy érzékenységű eljárás és berendezés kisebbségi töltéshordozók élettartamának mérésére félvezető anyagokban
JPS61173171A (ja) 半導体ウエハの抵抗率測定法
CN108089109A (zh) 一种半导体硅材料中少数载流子寿命的测试方法
JPS59150443A (ja) 半導体のキヤリアライフタイム計測装置
JPS6248377B2 (enrdf_load_stackoverflow)
JPS61220348A (ja) 半導体の処理過程評価方法およびその装置
JPH05136241A (ja) 半導体ウエハのキヤリアのライフタイム測定方法
SU1160484A1 (ru) Способ определени подвижности неосновных носителей зар да (его варианты)
JPH07130810A (ja) キャリヤライフタイム測定法及びその装置
JPS5953703B2 (ja) 半導体中の少数担体寿命測定方法
Benedetto et al. Modulated photothermal reflectance characterization of doped silicon wafers