JPS6248377B2 - - Google Patents
Info
- Publication number
- JPS6248377B2 JPS6248377B2 JP5391883A JP5391883A JPS6248377B2 JP S6248377 B2 JPS6248377 B2 JP S6248377B2 JP 5391883 A JP5391883 A JP 5391883A JP 5391883 A JP5391883 A JP 5391883A JP S6248377 B2 JPS6248377 B2 JP S6248377B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- light
- eff
- lifetime
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5391883A JPS59181549A (ja) | 1983-03-31 | 1983-03-31 | 半導体ウエ−ハのライフタイム測定方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5391883A JPS59181549A (ja) | 1983-03-31 | 1983-03-31 | 半導体ウエ−ハのライフタイム測定方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59181549A JPS59181549A (ja) | 1984-10-16 |
JPS6248377B2 true JPS6248377B2 (enrdf_load_stackoverflow) | 1987-10-13 |
Family
ID=12956087
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5391883A Granted JPS59181549A (ja) | 1983-03-31 | 1983-03-31 | 半導体ウエ−ハのライフタイム測定方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59181549A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0666368B2 (ja) * | 1987-07-14 | 1994-08-24 | 工業技術院長 | 半導体評価装置 |
JPS6437843A (en) * | 1987-08-03 | 1989-02-08 | Kyushu Electron Metal | Method and device for measuring lifetime of semiconductor |
-
1983
- 1983-03-31 JP JP5391883A patent/JPS59181549A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS59181549A (ja) | 1984-10-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH0272646A (ja) | ウェーハ表面の半導体特性測定方法 | |
Bergonzo et al. | CVD diamond for radiation detection devices | |
Kato et al. | Estimation of surface recombination velocity from thickness dependence of carrier lifetime in n-type 4H-SiC epilayers | |
US5418172A (en) | Method for detecting sources of contamination in silicon using a contamination monitor wafer | |
US5430386A (en) | Method and apparatus for evaluating semiconductor wafers by irradiation with microwave and excitation light | |
US12298452B2 (en) | Radiation detectors having perovskite films | |
JPS6248377B2 (enrdf_load_stackoverflow) | ||
JP2007042950A (ja) | エピタキシャル層の品質評価方法、soi層の品質評価方法、シリコンウェーハの製造方法 | |
US6645787B2 (en) | Gamma ray detector | |
US4569728A (en) | Selective anodic oxidation of semiconductors for pattern generation | |
Yuba et al. | Laser‐irradiation effects on unencapsulated GaAs studied by capacitance spectroscopy | |
JPH0318340B2 (enrdf_load_stackoverflow) | ||
Watanabe | Dependence of effective carrier lifetime in iron-doped silicon crystals on the carrier injection level | |
JP3665207B2 (ja) | 半導体評価装置 | |
Slapa et al. | The characterization of CdTe and HgI2 crystals and detectors by light spot scanning (LSS) | |
JPH04289442A (ja) | ライフタイム測定方法 | |
Marinelli et al. | Analysis of traps in high quality CVD diamond films through the temperature dependence of carrier dynamics | |
JPH07130810A (ja) | キャリヤライフタイム測定法及びその装置 | |
Ostrovskii et al. | Acoustically driven opticalphenomena in bulk and low-dimensional semiconductors | |
RU2059324C1 (ru) | Способ определения степени неоднородности легирования полупроводниковых слоев на изолирующих подложках | |
JPH05136241A (ja) | 半導体ウエハのキヤリアのライフタイム測定方法 | |
JP3319496B2 (ja) | シリコン単結晶の鉄検出法及び鉄汚染濃度評価法 | |
JPH10270516A (ja) | 半導体ウエハの評価方法及びその装置 | |
RU2156520C2 (ru) | Способ контроля структурного совершенства монокристаллических полупроводниковых пластин | |
Ivanov et al. | Properties of p+-n structures with a buried layer of radiation-induced defects |