JPS59181549A - 半導体ウエ−ハのライフタイム測定方法 - Google Patents
半導体ウエ−ハのライフタイム測定方法Info
- Publication number
- JPS59181549A JPS59181549A JP5391883A JP5391883A JPS59181549A JP S59181549 A JPS59181549 A JP S59181549A JP 5391883 A JP5391883 A JP 5391883A JP 5391883 A JP5391883 A JP 5391883A JP S59181549 A JPS59181549 A JP S59181549A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor wafer
- light
- semiconductor
- measuring
- τeff
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5391883A JPS59181549A (ja) | 1983-03-31 | 1983-03-31 | 半導体ウエ−ハのライフタイム測定方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5391883A JPS59181549A (ja) | 1983-03-31 | 1983-03-31 | 半導体ウエ−ハのライフタイム測定方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59181549A true JPS59181549A (ja) | 1984-10-16 |
| JPS6248377B2 JPS6248377B2 (enrdf_load_stackoverflow) | 1987-10-13 |
Family
ID=12956087
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5391883A Granted JPS59181549A (ja) | 1983-03-31 | 1983-03-31 | 半導体ウエ−ハのライフタイム測定方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59181549A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6418234A (en) * | 1987-07-14 | 1989-01-23 | Agency Ind Science Techn | Semiconductor evaluation device |
| JPS6437843A (en) * | 1987-08-03 | 1989-02-08 | Kyushu Electron Metal | Method and device for measuring lifetime of semiconductor |
-
1983
- 1983-03-31 JP JP5391883A patent/JPS59181549A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6418234A (en) * | 1987-07-14 | 1989-01-23 | Agency Ind Science Techn | Semiconductor evaluation device |
| JPS6437843A (en) * | 1987-08-03 | 1989-02-08 | Kyushu Electron Metal | Method and device for measuring lifetime of semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6248377B2 (enrdf_load_stackoverflow) | 1987-10-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Lang et al. | Observation of recombination-enhanced defect reactions in semiconductors | |
| JPH0272646A (ja) | ウェーハ表面の半導体特性測定方法 | |
| US3200259A (en) | Solid state electrical devices utilizing phonon propagation | |
| JPS59181549A (ja) | 半導体ウエ−ハのライフタイム測定方法 | |
| Killoran et al. | ODMR investigation of the PGa antisite defect in GaP | |
| Kažukauskas et al. | Interaction of deep levels and potential fluctuations in scattering and recombination phenomena in semi‐insulating GaAs | |
| US6645787B2 (en) | Gamma ray detector | |
| JPS6253944B2 (enrdf_load_stackoverflow) | ||
| Ausmees et al. | Monte Carlo Simulation of Electron–Phonon Scattering in the XUV‐Induced Electron Emission of NaCl | |
| Nava et al. | Analysis of uniformity of as prepared and irradiated SI GaAs radiation detectors | |
| SU1324525A1 (ru) | Способ обработки полупроводниковых материалов | |
| JPS5893377A (ja) | 半導体装置の製造方法 | |
| Quenter et al. | Spatially resolved flux flow in long-overlap Josephson tunnel junctions | |
| Janowitz et al. | Angle resolved resonant photoemission spectra of GaAs (110) | |
| Bolger et al. | Carrier dynamics and emission‐line narrowing in n‐and p‐type molecular‐beam grown ZnSe epilayers | |
| Kopeika et al. | Gamma ray irradiated LED's: Surface emission and significant wavelength tuning via surface states | |
| RU2034277C1 (ru) | Способ стабилизации параметров излучающих диодов | |
| Tetel’baum et al. | Long-range influence of weak optical irradiation of silicon | |
| SU1160484A1 (ru) | Способ определени подвижности неосновных носителей зар да (его варианты) | |
| Yoshida et al. | Improvement of photoluminescence characteristics of AlGaInP double hetero-structures grown by OMVPE | |
| Datta et al. | Temperature dependence of surface photovoltage of bulk semiconductors and the effect of surface passivation | |
| Matsuoka et al. | Effect of carrier lifetime on laser-induced damage in silicon | |
| JPH04225150A (ja) | 半導体材料のライフタイム評価方法及びその装置 | |
| Obolenskii | Comparison between the Ion-Beam and the Laser Long-Range Gettering of GaAs MESFETs | |
| JPS60103612A (ja) | 半導体装置の製造方法 |