JPS59181549A - 半導体ウエ−ハのライフタイム測定方法 - Google Patents

半導体ウエ−ハのライフタイム測定方法

Info

Publication number
JPS59181549A
JPS59181549A JP5391883A JP5391883A JPS59181549A JP S59181549 A JPS59181549 A JP S59181549A JP 5391883 A JP5391883 A JP 5391883A JP 5391883 A JP5391883 A JP 5391883A JP S59181549 A JPS59181549 A JP S59181549A
Authority
JP
Japan
Prior art keywords
semiconductor wafer
light
semiconductor
measuring
τeff
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5391883A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6248377B2 (enrdf_load_stackoverflow
Inventor
Koji Murai
村井 耕治
Akira Usami
宇佐美 晶
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NIPPON SILICON KK
Mitsubishi Metal Corp
Original Assignee
NIPPON SILICON KK
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NIPPON SILICON KK, Mitsubishi Metal Corp filed Critical NIPPON SILICON KK
Priority to JP5391883A priority Critical patent/JPS59181549A/ja
Publication of JPS59181549A publication Critical patent/JPS59181549A/ja
Publication of JPS6248377B2 publication Critical patent/JPS6248377B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP5391883A 1983-03-31 1983-03-31 半導体ウエ−ハのライフタイム測定方法 Granted JPS59181549A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5391883A JPS59181549A (ja) 1983-03-31 1983-03-31 半導体ウエ−ハのライフタイム測定方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5391883A JPS59181549A (ja) 1983-03-31 1983-03-31 半導体ウエ−ハのライフタイム測定方法

Publications (2)

Publication Number Publication Date
JPS59181549A true JPS59181549A (ja) 1984-10-16
JPS6248377B2 JPS6248377B2 (enrdf_load_stackoverflow) 1987-10-13

Family

ID=12956087

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5391883A Granted JPS59181549A (ja) 1983-03-31 1983-03-31 半導体ウエ−ハのライフタイム測定方法

Country Status (1)

Country Link
JP (1) JPS59181549A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6418234A (en) * 1987-07-14 1989-01-23 Agency Ind Science Techn Semiconductor evaluation device
JPS6437843A (en) * 1987-08-03 1989-02-08 Kyushu Electron Metal Method and device for measuring lifetime of semiconductor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6418234A (en) * 1987-07-14 1989-01-23 Agency Ind Science Techn Semiconductor evaluation device
JPS6437843A (en) * 1987-08-03 1989-02-08 Kyushu Electron Metal Method and device for measuring lifetime of semiconductor

Also Published As

Publication number Publication date
JPS6248377B2 (enrdf_load_stackoverflow) 1987-10-13

Similar Documents

Publication Publication Date Title
Lang et al. Observation of recombination-enhanced defect reactions in semiconductors
JPH0272646A (ja) ウェーハ表面の半導体特性測定方法
Reynolds et al. Measurement of diffusion length in solar cells
US3200259A (en) Solid state electrical devices utilizing phonon propagation
JPS59181549A (ja) 半導体ウエ−ハのライフタイム測定方法
Kažukauskas et al. Interaction of deep levels and potential fluctuations in scattering and recombination phenomena in semi‐insulating GaAs
US6645787B2 (en) Gamma ray detector
Willardson Transport properties in silicon and gallium arsenide
JPS6253944B2 (enrdf_load_stackoverflow)
Schultheis et al. Influence of a surface electric field on the line shape of the excitonic emission in GaAs
Ausmees et al. Monte Carlo Simulation of Electron–Phonon Scattering in the XUV‐Induced Electron Emission of NaCl
Long et al. Photoelectron spectroscopy of the laser-excited X surface state on GaAs (110) using synchrotron radiation
Nava et al. Analysis of uniformity of as prepared and irradiated SI GaAs radiation detectors
SU1324525A1 (ru) Способ обработки полупроводниковых материалов
Bolger et al. Carrier dynamics and emission‐line narrowing in n‐and p‐type molecular‐beam grown ZnSe epilayers
JPH05136241A (ja) 半導体ウエハのキヤリアのライフタイム測定方法
Kopeika et al. Gamma ray irradiated LED's: Surface emission and significant wavelength tuning via surface states
RU2034277C1 (ru) Способ стабилизации параметров излучающих диодов
SU1160484A1 (ru) Способ определени подвижности неосновных носителей зар да (его варианты)
Matsuoka et al. Effect of carrier lifetime on laser-induced damage in silicon
Ridley Measurement of Lifetime by the Photoconductive Decay Method
JPH04225150A (ja) 半導体材料のライフタイム評価方法及びその装置
Obolenskii Comparison between the Ion-Beam and the Laser Long-Range Gettering of GaAs MESFETs
JPS60103612A (ja) 半導体装置の製造方法
Okazaki et al. Spectrum of fluctuations and lifepath in silicon