JPS6253938B2 - - Google Patents
Info
- Publication number
- JPS6253938B2 JPS6253938B2 JP57223039A JP22303982A JPS6253938B2 JP S6253938 B2 JPS6253938 B2 JP S6253938B2 JP 57223039 A JP57223039 A JP 57223039A JP 22303982 A JP22303982 A JP 22303982A JP S6253938 B2 JPS6253938 B2 JP S6253938B2
- Authority
- JP
- Japan
- Prior art keywords
- reticle
- created
- exposure
- conductor
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004020 conductor Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 18
- 239000010408 film Substances 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- 230000015654 memory Effects 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57223039A JPS59113622A (ja) | 1982-12-21 | 1982-12-21 | ステツプアンドリピ−ト方式露光方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57223039A JPS59113622A (ja) | 1982-12-21 | 1982-12-21 | ステツプアンドリピ−ト方式露光方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59113622A JPS59113622A (ja) | 1984-06-30 |
JPS6253938B2 true JPS6253938B2 (de) | 1987-11-12 |
Family
ID=16791881
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57223039A Granted JPS59113622A (ja) | 1982-12-21 | 1982-12-21 | ステツプアンドリピ−ト方式露光方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59113622A (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6247129A (ja) * | 1985-08-26 | 1987-02-28 | Fujitsu Ltd | 半導体装置の製造方法 |
JPS62147728A (ja) * | 1985-12-23 | 1987-07-01 | Fujitsu Ltd | 露光方法 |
JPH03116714A (ja) * | 1989-09-28 | 1991-05-17 | Nec Ic Microcomput Syst Ltd | 半導体集積回路素子の製造方法 |
-
1982
- 1982-12-21 JP JP57223039A patent/JPS59113622A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS59113622A (ja) | 1984-06-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2664408B2 (ja) | 混成集積回路の製造方法 | |
US4603473A (en) | Method of fabricating integrated semiconductor circuit | |
JPS6253938B2 (de) | ||
JP3952248B2 (ja) | 露光方法およびそれに用いられるマスクの製造方法 | |
JPH0795543B2 (ja) | エツチング方法 | |
JPS6233580B2 (de) | ||
US5338397A (en) | Method of forming a semiconductor device | |
KR100339414B1 (ko) | 반도체 파워 라인 분석용 패드의 형성 방법 | |
JPH1167639A (ja) | 露光方法及び露光用マスク | |
JPS599934A (ja) | プロ−ブカ−ドの製造方法 | |
KR100459688B1 (ko) | 도전층패턴상에내식각성버퍼층을구비하는반도체장치및그제조방법 | |
JPH0562972A (ja) | 半導体装置及びその製造方法 | |
JPS63160330A (ja) | マスクアライメントの方法 | |
JPS6180835A (ja) | 半導体装置 | |
JPH0514542Y2 (de) | ||
JP2534496B2 (ja) | 半導体装置の製造方法 | |
JPH1174253A (ja) | 半導体装置の製造方法 | |
KR0126636B1 (ko) | 반도체소자의 패턴 형성방법 | |
KR0144229B1 (ko) | 반도체 소자의 미세 콘택 형성 방법 | |
JP2606661B2 (ja) | プリント配線板の製造方法 | |
JPS62177922A (ja) | 半導体装置の製造方法 | |
JPH0815853A (ja) | 集積回路製造用フォトマスク | |
JPS60201634A (ja) | 半導体装置の製造方法 | |
JPS63287033A (ja) | 半導体装置の製造方法 | |
JPS5896737A (ja) | 半導体装置の製造方法 |