JPS6252458B2 - - Google Patents

Info

Publication number
JPS6252458B2
JPS6252458B2 JP58067155A JP6715583A JPS6252458B2 JP S6252458 B2 JPS6252458 B2 JP S6252458B2 JP 58067155 A JP58067155 A JP 58067155A JP 6715583 A JP6715583 A JP 6715583A JP S6252458 B2 JPS6252458 B2 JP S6252458B2
Authority
JP
Japan
Prior art keywords
layer
silicon
epitaxial
silicon oxide
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58067155A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58212148A (ja
Inventor
E Kooi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL7002384.A external-priority patent/NL159817B/xx
Application filed by Philips Gloeilampenfabrieken NV, Koninklijke Philips Electronics NV filed Critical Philips Gloeilampenfabrieken NV
Publication of JPS58212148A publication Critical patent/JPS58212148A/ja
Publication of JPS6252458B2 publication Critical patent/JPS6252458B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
    • H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP58067155A 1970-02-19 1983-04-18 集積半導体装置 Granted JPS58212148A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7002384 1970-02-19
NL7002384.A NL159817B (nl) 1966-10-05 1970-02-19 Werkwijze ter vervaardiging van een halfgeleiderinrichting.

Publications (2)

Publication Number Publication Date
JPS58212148A JPS58212148A (ja) 1983-12-09
JPS6252458B2 true JPS6252458B2 (enrdf_load_stackoverflow) 1987-11-05

Family

ID=19809379

Family Applications (3)

Application Number Title Priority Date Filing Date
JP50141238A Pending JPS5176087A (enrdf_load_stackoverflow) 1970-02-19 1975-11-27
JP13535380A Granted JPS56153748A (en) 1970-02-19 1980-09-30 Integrated semiconductor device
JP58067155A Granted JPS58212148A (ja) 1970-02-19 1983-04-18 集積半導体装置

Family Applications Before (2)

Application Number Title Priority Date Filing Date
JP50141238A Pending JPS5176087A (enrdf_load_stackoverflow) 1970-02-19 1975-11-27
JP13535380A Granted JPS56153748A (en) 1970-02-19 1980-09-30 Integrated semiconductor device

Country Status (6)

Country Link
JP (3) JPS5176087A (enrdf_load_stackoverflow)
BE (1) BE763112R (enrdf_load_stackoverflow)
BR (1) BR7101089D0 (enrdf_load_stackoverflow)
CA (1) CA920281A (enrdf_load_stackoverflow)
ES (1) ES388379A2 (enrdf_load_stackoverflow)
IT (1) IT976361B (enrdf_load_stackoverflow)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3386865A (en) * 1965-05-10 1968-06-04 Ibm Process of making planar semiconductor devices isolated by encapsulating oxide filled channels

Also Published As

Publication number Publication date
JPS5723419B2 (enrdf_load_stackoverflow) 1982-05-18
JPS56153748A (en) 1981-11-27
CA920281A (en) 1973-01-30
BR7101089D0 (pt) 1973-02-27
JPS58212148A (ja) 1983-12-09
IT976361B (it) 1974-08-20
BE763112R (fr) 1971-08-17
JPS5176087A (enrdf_load_stackoverflow) 1976-07-01
ES388379A2 (es) 1973-06-01

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