CA920281A - Method of manufacturing a semiconductor device and semiconductor device obtained by using the method - Google Patents
Method of manufacturing a semiconductor device and semiconductor device obtained by using the methodInfo
- Publication number
- CA920281A CA920281A CA105325A CA105325A CA920281A CA 920281 A CA920281 A CA 920281A CA 105325 A CA105325 A CA 105325A CA 105325 A CA105325 A CA 105325A CA 920281 A CA920281 A CA 920281A
- Authority
- CA
- Canada
- Prior art keywords
- semiconductor device
- manufacturing
- device obtained
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Bipolar Transistors (AREA)
- Local Oxidation Of Silicon (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7002384.A NL159817B (nl) | 1966-10-05 | 1970-02-19 | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
Publications (1)
Publication Number | Publication Date |
---|---|
CA920281A true CA920281A (en) | 1973-01-30 |
Family
ID=19809379
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA105325A Expired CA920281A (en) | 1970-02-19 | 1971-02-15 | Method of manufacturing a semiconductor device and semiconductor device obtained by using the method |
Country Status (6)
Country | Link |
---|---|
JP (3) | JPS5176087A (enrdf_load_stackoverflow) |
BE (1) | BE763112R (enrdf_load_stackoverflow) |
BR (1) | BR7101089D0 (enrdf_load_stackoverflow) |
CA (1) | CA920281A (enrdf_load_stackoverflow) |
ES (1) | ES388379A2 (enrdf_load_stackoverflow) |
IT (1) | IT976361B (enrdf_load_stackoverflow) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3386865A (en) * | 1965-05-10 | 1968-06-04 | Ibm | Process of making planar semiconductor devices isolated by encapsulating oxide filled channels |
-
1971
- 1971-02-15 CA CA105325A patent/CA920281A/en not_active Expired
- 1971-02-16 IT IT20622/71A patent/IT976361B/it active
- 1971-02-17 BE BE763112A patent/BE763112R/xx active
- 1971-02-17 ES ES388379A patent/ES388379A2/es not_active Expired
- 1971-02-17 BR BR1089/71A patent/BR7101089D0/pt unknown
-
1975
- 1975-11-27 JP JP50141238A patent/JPS5176087A/ja active Pending
-
1980
- 1980-09-30 JP JP13535380A patent/JPS56153748A/ja active Granted
-
1983
- 1983-04-18 JP JP58067155A patent/JPS58212148A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5723419B2 (enrdf_load_stackoverflow) | 1982-05-18 |
JPS56153748A (en) | 1981-11-27 |
BR7101089D0 (pt) | 1973-02-27 |
JPS6252458B2 (enrdf_load_stackoverflow) | 1987-11-05 |
JPS58212148A (ja) | 1983-12-09 |
IT976361B (it) | 1974-08-20 |
BE763112R (fr) | 1971-08-17 |
JPS5176087A (enrdf_load_stackoverflow) | 1976-07-01 |
ES388379A2 (es) | 1973-06-01 |
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