JPS6251225A - 光化学反応方法 - Google Patents

光化学反応方法

Info

Publication number
JPS6251225A
JPS6251225A JP60189600A JP18960085A JPS6251225A JP S6251225 A JPS6251225 A JP S6251225A JP 60189600 A JP60189600 A JP 60189600A JP 18960085 A JP18960085 A JP 18960085A JP S6251225 A JPS6251225 A JP S6251225A
Authority
JP
Japan
Prior art keywords
wafer
light
temperature
chamber
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60189600A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0521336B2 (cg-RX-API-DMAC10.html
Inventor
Kenji Shibata
芝田　健二
Yasuhiro Mochizuki
康弘 望月
Hiroyuki Shichida
七田　弘之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Mitsubishi Power Ltd
Original Assignee
Babcock Hitachi KK
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Babcock Hitachi KK, Hitachi Ltd filed Critical Babcock Hitachi KK
Priority to JP60189600A priority Critical patent/JPS6251225A/ja
Publication of JPS6251225A publication Critical patent/JPS6251225A/ja
Publication of JPH0521336B2 publication Critical patent/JPH0521336B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP60189600A 1985-08-30 1985-08-30 光化学反応方法 Granted JPS6251225A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60189600A JPS6251225A (ja) 1985-08-30 1985-08-30 光化学反応方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60189600A JPS6251225A (ja) 1985-08-30 1985-08-30 光化学反応方法

Publications (2)

Publication Number Publication Date
JPS6251225A true JPS6251225A (ja) 1987-03-05
JPH0521336B2 JPH0521336B2 (cg-RX-API-DMAC10.html) 1993-03-24

Family

ID=16244023

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60189600A Granted JPS6251225A (ja) 1985-08-30 1985-08-30 光化学反応方法

Country Status (1)

Country Link
JP (1) JPS6251225A (cg-RX-API-DMAC10.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63276225A (ja) * 1987-05-08 1988-11-14 Tokyo Electron Ltd アッシング装置
CN106896194A (zh) * 2017-04-17 2017-06-27 武汉华星光电技术有限公司 一种监控涂布显影设备灯箱内臭氧含量的装置及方法
JP2022009989A (ja) * 2017-11-13 2022-01-14 東京エレクトロン株式会社 基板処理装置、基板処理方法、及び記憶媒体

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6049630A (ja) * 1983-08-29 1985-03-18 Fujitsu Ltd 半導体装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6049630A (ja) * 1983-08-29 1985-03-18 Fujitsu Ltd 半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63276225A (ja) * 1987-05-08 1988-11-14 Tokyo Electron Ltd アッシング装置
CN106896194A (zh) * 2017-04-17 2017-06-27 武汉华星光电技术有限公司 一种监控涂布显影设备灯箱内臭氧含量的装置及方法
JP2022009989A (ja) * 2017-11-13 2022-01-14 東京エレクトロン株式会社 基板処理装置、基板処理方法、及び記憶媒体

Also Published As

Publication number Publication date
JPH0521336B2 (cg-RX-API-DMAC10.html) 1993-03-24

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Legal Events

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