JPS6250972B2 - - Google Patents
Info
- Publication number
- JPS6250972B2 JPS6250972B2 JP54073379A JP7337979A JPS6250972B2 JP S6250972 B2 JPS6250972 B2 JP S6250972B2 JP 54073379 A JP54073379 A JP 54073379A JP 7337979 A JP7337979 A JP 7337979A JP S6250972 B2 JPS6250972 B2 JP S6250972B2
- Authority
- JP
- Japan
- Prior art keywords
- ion implantation
- ion
- impurities
- metal film
- implantation layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000012535 impurity Substances 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 238000005468 ion implantation Methods 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 238000010438 heat treatment Methods 0.000 description 13
- 230000004913 activation Effects 0.000 description 5
- 230000003213 activating effect Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7337979A JPS55165640A (en) | 1979-06-11 | 1979-06-11 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7337979A JPS55165640A (en) | 1979-06-11 | 1979-06-11 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55165640A JPS55165640A (en) | 1980-12-24 |
| JPS6250972B2 true JPS6250972B2 (US20020128544A1-20020912-P00008.png) | 1987-10-28 |
Family
ID=13516485
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7337979A Granted JPS55165640A (en) | 1979-06-11 | 1979-06-11 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55165640A (US20020128544A1-20020912-P00008.png) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH028485U (US20020128544A1-20020912-P00008.png) * | 1988-06-29 | 1990-01-19 | ||
| JPH0250363U (US20020128544A1-20020912-P00008.png) * | 1988-10-03 | 1990-04-09 | ||
| JPH0250362U (US20020128544A1-20020912-P00008.png) * | 1988-10-03 | 1990-04-09 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH027422A (ja) * | 1988-06-24 | 1990-01-11 | Ricoh Co Ltd | レーザによる高温熱処理方法 |
| JP2005183604A (ja) * | 2003-12-18 | 2005-07-07 | Semiconductor Leading Edge Technologies Inc | 半導体装置の熱処理方法 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4825816A (US20020128544A1-20020912-P00008.png) * | 1971-08-11 | 1973-04-04 |
-
1979
- 1979-06-11 JP JP7337979A patent/JPS55165640A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4825816A (US20020128544A1-20020912-P00008.png) * | 1971-08-11 | 1973-04-04 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH028485U (US20020128544A1-20020912-P00008.png) * | 1988-06-29 | 1990-01-19 | ||
| JPH0250363U (US20020128544A1-20020912-P00008.png) * | 1988-10-03 | 1990-04-09 | ||
| JPH0250362U (US20020128544A1-20020912-P00008.png) * | 1988-10-03 | 1990-04-09 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55165640A (en) | 1980-12-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5399506A (en) | Semiconductor fabricating process | |
| US5474940A (en) | Method of fabricating a semiconductor device having shallow junctions in source-drain regions and a gate electrode with a low resistance silicide layer | |
| US4404735A (en) | Method for manufacturing a field isolation structure for a semiconductor device | |
| JP2002524846A (ja) | 小型集積回路の作製における用途に適したガス浸漬レーザアニーリング方法 | |
| US6300208B1 (en) | Methods for annealing an integrated device using a radiant energy absorber layer | |
| US6645838B1 (en) | Selective absorption process for forming an activated doped region in a semiconductor | |
| JPH03129832A (ja) | アニーリング | |
| JPS6250972B2 (US20020128544A1-20020912-P00008.png) | ||
| JPS61179578A (ja) | 電界効果トランジスタの製作方法 | |
| US6952269B2 (en) | Apparatus and method for adiabatically heating a semiconductor surface | |
| JPH0677155A (ja) | 半導体基板の熱処理方法 | |
| Pearton et al. | Transient thermal processing of GaAs | |
| JPS6125214B2 (US20020128544A1-20020912-P00008.png) | ||
| JPH03227525A (ja) | 薄膜トランジスタの製造方法 | |
| JPS6250971B2 (US20020128544A1-20020912-P00008.png) | ||
| JPS6333292B2 (US20020128544A1-20020912-P00008.png) | ||
| JPH01256124A (ja) | Ｍｏｓ型半導体装置の製造方法 | |
| JPS641925B2 (US20020128544A1-20020912-P00008.png) | ||
| JPS62119974A (ja) | 薄膜トランジスタの製造方法 | |
| JPH02194626A (ja) | 薄膜トランジスタの製造方法 | |
| JPH0547978B2 (US20020128544A1-20020912-P00008.png) | ||
| JP2853143B2 (ja) | 半導体装置の製造方法 | |
| JP3084089B2 (ja) | 半導体装置用基板及びその製造方法 | |
| JPH0795535B2 (ja) | 半導体装置の製造方法 | |
| JPH0294519A (ja) | 半導体装置の製造方法 |
