JPS624865B2 - - Google Patents
Info
- Publication number
- JPS624865B2 JPS624865B2 JP5731377A JP5731377A JPS624865B2 JP S624865 B2 JPS624865 B2 JP S624865B2 JP 5731377 A JP5731377 A JP 5731377A JP 5731377 A JP5731377 A JP 5731377A JP S624865 B2 JPS624865 B2 JP S624865B2
- Authority
- JP
- Japan
- Prior art keywords
- epitaxial layer
- layer
- gate electrode
- epitaxial
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 230000005669 field effect Effects 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5731377A JPS53142189A (en) | 1977-05-17 | 1977-05-17 | Insulating gate type field effect transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5731377A JPS53142189A (en) | 1977-05-17 | 1977-05-17 | Insulating gate type field effect transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS53142189A JPS53142189A (en) | 1978-12-11 |
| JPS624865B2 true JPS624865B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1987-02-02 |
Family
ID=13052066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5731377A Granted JPS53142189A (en) | 1977-05-17 | 1977-05-17 | Insulating gate type field effect transistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS53142189A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4379305A (en) * | 1980-05-29 | 1983-04-05 | General Instrument Corp. | Mesh gate V-MOS power FET |
| JPS57128966A (en) * | 1981-02-02 | 1982-08-10 | Seiko Epson Corp | Mis type semiconductor device |
| FR2513016A1 (fr) * | 1981-09-14 | 1983-03-18 | Radiotechnique Compelec | Transistor v mos haute tension, et son procede de fabrication |
| US4554570A (en) * | 1982-06-24 | 1985-11-19 | Rca Corporation | Vertically integrated IGFET device |
| US4757361A (en) * | 1986-07-23 | 1988-07-12 | International Business Machines Corporation | Amorphous thin film transistor device |
| DE3752273T2 (de) * | 1986-11-19 | 1999-09-09 | Nishizawa | Statische Induktionstransistoren mit isoliertem Gatter in einer eingeschnittenen Stufe und Verfahren zu deren Herstellung |
| JP2570742B2 (ja) * | 1987-05-27 | 1997-01-16 | ソニー株式会社 | 半導体装置 |
| US4914058A (en) * | 1987-12-29 | 1990-04-03 | Siliconix Incorporated | Grooved DMOS process with varying gate dielectric thickness |
| US6351009B1 (en) | 1999-03-01 | 2002-02-26 | Fairchild Semiconductor Corporation | MOS-gated device having a buried gate and process for forming same |
-
1977
- 1977-05-17 JP JP5731377A patent/JPS53142189A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS53142189A (en) | 1978-12-11 |