JPS6248390B2 - - Google Patents

Info

Publication number
JPS6248390B2
JPS6248390B2 JP53016748A JP1674878A JPS6248390B2 JP S6248390 B2 JPS6248390 B2 JP S6248390B2 JP 53016748 A JP53016748 A JP 53016748A JP 1674878 A JP1674878 A JP 1674878A JP S6248390 B2 JPS6248390 B2 JP S6248390B2
Authority
JP
Japan
Prior art keywords
layer
amorphous
amorphous silicon
resistivity
conduction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53016748A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54109762A (en
Inventor
Setsuo Usui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP1674878A priority Critical patent/JPS54109762A/ja
Publication of JPS54109762A publication Critical patent/JPS54109762A/ja
Publication of JPS6248390B2 publication Critical patent/JPS6248390B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Recrystallisation Techniques (AREA)
  • Bipolar Transistors (AREA)
  • Photovoltaic Devices (AREA)
JP1674878A 1978-02-16 1978-02-16 Semiconductor device Granted JPS54109762A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1674878A JPS54109762A (en) 1978-02-16 1978-02-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1674878A JPS54109762A (en) 1978-02-16 1978-02-16 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS54109762A JPS54109762A (en) 1979-08-28
JPS6248390B2 true JPS6248390B2 (enrdf_load_stackoverflow) 1987-10-13

Family

ID=11924880

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1674878A Granted JPS54109762A (en) 1978-02-16 1978-02-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54109762A (enrdf_load_stackoverflow)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5752176A (en) * 1980-09-16 1982-03-27 Semiconductor Energy Lab Co Ltd Semiconductor device
JPS57100770A (en) * 1980-12-16 1982-06-23 Seiko Epson Corp Switching element
JPS57102076A (en) * 1980-12-17 1982-06-24 Seiko Epson Corp Switching element
JPS57113296A (en) * 1980-12-29 1982-07-14 Seiko Epson Corp Switching element
JPS5890790A (ja) * 1981-08-07 1983-05-30 ザ　ブリテイッシュ　ペトロレアム　カンパニ−　ピ−．エル．シ− 半導体装置
JPH0715587B2 (ja) * 1985-06-25 1995-02-22 株式会社東芝 光導電性部材
JPH0713748B2 (ja) * 1985-06-25 1995-02-15 株式会社東芝 光導電性部材
JPS62279672A (ja) * 1986-05-28 1987-12-04 Kanegafuchi Chem Ind Co Ltd 半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1062510B (it) * 1975-07-28 1984-10-20 Rca Corp Dispositivo semiconduttore presentante una regione attiva di silicio amorfo

Also Published As

Publication number Publication date
JPS54109762A (en) 1979-08-28

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