JPS6247472A - 立方晶チツ化ホウ素膜の形成方法 - Google Patents
立方晶チツ化ホウ素膜の形成方法Info
- Publication number
- JPS6247472A JPS6247472A JP60185827A JP18582785A JPS6247472A JP S6247472 A JPS6247472 A JP S6247472A JP 60185827 A JP60185827 A JP 60185827A JP 18582785 A JP18582785 A JP 18582785A JP S6247472 A JPS6247472 A JP S6247472A
- Authority
- JP
- Japan
- Prior art keywords
- boron nitride
- cubic boron
- nitride film
- density plasma
- bias voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052582 BN Inorganic materials 0.000 title claims abstract description 28
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 title claims abstract description 28
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 238000007740 vapor deposition Methods 0.000 claims abstract description 8
- 230000005684 electric field Effects 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 24
- 239000012495 reaction gas Substances 0.000 claims description 14
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 230000008021 deposition Effects 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 8
- 150000002500 ions Chemical class 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000001659 ion-beam spectroscopy Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- -1 phosphorus nitride Chemical class 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60185827A JPS6247472A (ja) | 1985-08-26 | 1985-08-26 | 立方晶チツ化ホウ素膜の形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60185827A JPS6247472A (ja) | 1985-08-26 | 1985-08-26 | 立方晶チツ化ホウ素膜の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6247472A true JPS6247472A (ja) | 1987-03-02 |
| JPH031377B2 JPH031377B2 (enrdf_load_stackoverflow) | 1991-01-10 |
Family
ID=16177565
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60185827A Granted JPS6247472A (ja) | 1985-08-26 | 1985-08-26 | 立方晶チツ化ホウ素膜の形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6247472A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01116070A (ja) * | 1987-10-29 | 1989-05-09 | Internatl Business Mach Corp <Ibm> | スパツタ装置 |
| US4941430A (en) * | 1987-05-01 | 1990-07-17 | Nihon Sinku Gijutsu Kabusiki Kaisha | Apparatus for forming reactive deposition film |
| US5277939A (en) * | 1987-02-10 | 1994-01-11 | Semiconductor Energy Laboratory Co., Ltd. | ECR CVD method for forming BN films |
| US5629053A (en) * | 1990-04-06 | 1997-05-13 | Siemens Aktiengesellschaft | Method for manufacturing microcrystalline cubic boron-nitride-layers |
-
1985
- 1985-08-26 JP JP60185827A patent/JPS6247472A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5277939A (en) * | 1987-02-10 | 1994-01-11 | Semiconductor Energy Laboratory Co., Ltd. | ECR CVD method for forming BN films |
| US4941430A (en) * | 1987-05-01 | 1990-07-17 | Nihon Sinku Gijutsu Kabusiki Kaisha | Apparatus for forming reactive deposition film |
| JPH01116070A (ja) * | 1987-10-29 | 1989-05-09 | Internatl Business Mach Corp <Ibm> | スパツタ装置 |
| US5629053A (en) * | 1990-04-06 | 1997-05-13 | Siemens Aktiengesellschaft | Method for manufacturing microcrystalline cubic boron-nitride-layers |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH031377B2 (enrdf_load_stackoverflow) | 1991-01-10 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| EXPY | Cancellation because of completion of term |