JPS6244866B2 - - Google Patents
Info
- Publication number
- JPS6244866B2 JPS6244866B2 JP56201906A JP20190681A JPS6244866B2 JP S6244866 B2 JPS6244866 B2 JP S6244866B2 JP 56201906 A JP56201906 A JP 56201906A JP 20190681 A JP20190681 A JP 20190681A JP S6244866 B2 JPS6244866 B2 JP S6244866B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- semiconductor region
- semiconductor
- junction
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
Landscapes
- Light Receiving Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56201906A JPS58103180A (ja) | 1981-12-15 | 1981-12-15 | 半導体光検出装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP56201906A JPS58103180A (ja) | 1981-12-15 | 1981-12-15 | 半導体光検出装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58103180A JPS58103180A (ja) | 1983-06-20 |
JPS6244866B2 true JPS6244866B2 (enrdf_load_stackoverflow) | 1987-09-22 |
Family
ID=16448776
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP56201906A Granted JPS58103180A (ja) | 1981-12-15 | 1981-12-15 | 半導体光検出装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58103180A (enrdf_load_stackoverflow) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1317199B1 (it) * | 2000-04-10 | 2003-05-27 | Milano Politecnico | Dispositivo fotorivelatore ultrasensibile con diaframma micrometricointegrato per microscopi confocali |
TW200947724A (en) * | 2008-01-14 | 2009-11-16 | Ibm | Using 3D integrated diffractive gratings in solar cells |
-
1981
- 1981-12-15 JP JP56201906A patent/JPS58103180A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58103180A (ja) | 1983-06-20 |
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