JPH0315352B2 - - Google Patents

Info

Publication number
JPH0315352B2
JPH0315352B2 JP56077569A JP7756981A JPH0315352B2 JP H0315352 B2 JPH0315352 B2 JP H0315352B2 JP 56077569 A JP56077569 A JP 56077569A JP 7756981 A JP7756981 A JP 7756981A JP H0315352 B2 JPH0315352 B2 JP H0315352B2
Authority
JP
Japan
Prior art keywords
photodiode
light
carrier
crosstalk
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP56077569A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57193057A (en
Inventor
Takeshi Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56077569A priority Critical patent/JPS57193057A/ja
Publication of JPS57193057A publication Critical patent/JPS57193057A/ja
Publication of JPH0315352B2 publication Critical patent/JPH0315352B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/186—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors having arrangements for blooming suppression

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP56077569A 1981-05-22 1981-05-22 Photodiode array Granted JPS57193057A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56077569A JPS57193057A (en) 1981-05-22 1981-05-22 Photodiode array

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56077569A JPS57193057A (en) 1981-05-22 1981-05-22 Photodiode array

Publications (2)

Publication Number Publication Date
JPS57193057A JPS57193057A (en) 1982-11-27
JPH0315352B2 true JPH0315352B2 (enrdf_load_stackoverflow) 1991-02-28

Family

ID=13637642

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56077569A Granted JPS57193057A (en) 1981-05-22 1981-05-22 Photodiode array

Country Status (1)

Country Link
JP (1) JPS57193057A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59132657A (ja) * 1983-01-20 1984-07-30 Matsushita Electric Ind Co Ltd 光電変換装置

Also Published As

Publication number Publication date
JPS57193057A (en) 1982-11-27

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