JPH0224386B2 - - Google Patents
Info
- Publication number
- JPH0224386B2 JPH0224386B2 JP18208484A JP18208484A JPH0224386B2 JP H0224386 B2 JPH0224386 B2 JP H0224386B2 JP 18208484 A JP18208484 A JP 18208484A JP 18208484 A JP18208484 A JP 18208484A JP H0224386 B2 JPH0224386 B2 JP H0224386B2
- Authority
- JP
- Japan
- Prior art keywords
- photodiode
- light
- receiving element
- chip
- shows
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
Landscapes
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59182084A JPS6158281A (ja) | 1984-08-29 | 1984-08-29 | ホトカプラ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59182084A JPS6158281A (ja) | 1984-08-29 | 1984-08-29 | ホトカプラ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6158281A JPS6158281A (ja) | 1986-03-25 |
| JPH0224386B2 true JPH0224386B2 (enrdf_load_stackoverflow) | 1990-05-29 |
Family
ID=16112077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59182084A Granted JPS6158281A (ja) | 1984-08-29 | 1984-08-29 | ホトカプラ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6158281A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114784131B (zh) * | 2022-04-11 | 2023-05-16 | 西安微电子技术研究所 | 一种光敏二极管、一种光敏运放电路及一种光敏芯片 |
-
1984
- 1984-08-29 JP JP59182084A patent/JPS6158281A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6158281A (ja) | 1986-03-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |