JPS6244854B2 - - Google Patents
Info
- Publication number
- JPS6244854B2 JPS6244854B2 JP56121142A JP12114281A JPS6244854B2 JP S6244854 B2 JPS6244854 B2 JP S6244854B2 JP 56121142 A JP56121142 A JP 56121142A JP 12114281 A JP12114281 A JP 12114281A JP S6244854 B2 JPS6244854 B2 JP S6244854B2
- Authority
- JP
- Japan
- Prior art keywords
- wiring layer
- film
- contact hole
- phosphorus glass
- glass film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56121142A JPS5821845A (ja) | 1981-07-31 | 1981-07-31 | 半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56121142A JPS5821845A (ja) | 1981-07-31 | 1981-07-31 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5821845A JPS5821845A (ja) | 1983-02-08 |
| JPS6244854B2 true JPS6244854B2 (enExample) | 1987-09-22 |
Family
ID=14803894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56121142A Granted JPS5821845A (ja) | 1981-07-31 | 1981-07-31 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5821845A (enExample) |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54142981A (en) * | 1978-04-27 | 1979-11-07 | Matsushita Electric Ind Co Ltd | Manufacture of insulation gate type semiconductor device |
-
1981
- 1981-07-31 JP JP56121142A patent/JPS5821845A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5821845A (ja) | 1983-02-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4392150A (en) | MOS Integrated circuit having refractory metal or metal silicide interconnect layer | |
| US5373192A (en) | Electromigration resistance metal interconnect | |
| JPS6336566A (ja) | 半導体装置の製造方法 | |
| JPS58139468A (ja) | 半導体装置およびその製造方法 | |
| JP3626773B2 (ja) | 半導体デバイスの導電層、mosfet及びそれらの製造方法 | |
| US4615746A (en) | Method of forming isolated island regions in a semiconductor substrate by selective etching and oxidation and devices formed therefrom | |
| US4425379A (en) | Polycrystalline silicon Schottky diode array | |
| KR900003835B1 (ko) | 반도체 장치(半導體裝置) | |
| JP3108447B2 (ja) | 半導体装置及びその製造方法 | |
| JPS6244854B2 (enExample) | ||
| JPS58215055A (ja) | 半導体集積回路装置 | |
| JPS6150385B2 (enExample) | ||
| JPS6230494B2 (enExample) | ||
| JP2596848B2 (ja) | 半導体装置の製造方法 | |
| JPS6113383B2 (enExample) | ||
| JPH0324066B2 (enExample) | ||
| JPH06196707A (ja) | 縦型絶縁ゲート型トランジスタの製法 | |
| JPS58106847A (ja) | 半導体装置の製造方法 | |
| JP2556155B2 (ja) | 半導体装置の製造方法 | |
| JPH05183156A (ja) | 半導体装置及びその製造方法 | |
| JPS5885529A (ja) | 半導体装置の製造方法 | |
| JPS6114663B2 (enExample) | ||
| JPH10256536A (ja) | 半導体装置及びその製造方法 | |
| JPH07201987A (ja) | 半導体集積回路装置及び製造方法 | |
| JPS6146055B2 (enExample) |