JPS6244854B2 - - Google Patents

Info

Publication number
JPS6244854B2
JPS6244854B2 JP56121142A JP12114281A JPS6244854B2 JP S6244854 B2 JPS6244854 B2 JP S6244854B2 JP 56121142 A JP56121142 A JP 56121142A JP 12114281 A JP12114281 A JP 12114281A JP S6244854 B2 JPS6244854 B2 JP S6244854B2
Authority
JP
Japan
Prior art keywords
wiring layer
film
contact hole
phosphorus glass
glass film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56121142A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5821845A (ja
Inventor
Haruo Amano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56121142A priority Critical patent/JPS5821845A/ja
Publication of JPS5821845A publication Critical patent/JPS5821845A/ja
Publication of JPS6244854B2 publication Critical patent/JPS6244854B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W20/069—

Landscapes

  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP56121142A 1981-07-31 1981-07-31 半導体装置 Granted JPS5821845A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56121142A JPS5821845A (ja) 1981-07-31 1981-07-31 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56121142A JPS5821845A (ja) 1981-07-31 1981-07-31 半導体装置

Publications (2)

Publication Number Publication Date
JPS5821845A JPS5821845A (ja) 1983-02-08
JPS6244854B2 true JPS6244854B2 (cg-RX-API-DMAC10.html) 1987-09-22

Family

ID=14803894

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56121142A Granted JPS5821845A (ja) 1981-07-31 1981-07-31 半導体装置

Country Status (1)

Country Link
JP (1) JPS5821845A (cg-RX-API-DMAC10.html)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54142981A (en) * 1978-04-27 1979-11-07 Matsushita Electric Ind Co Ltd Manufacture of insulation gate type semiconductor device

Also Published As

Publication number Publication date
JPS5821845A (ja) 1983-02-08

Similar Documents

Publication Publication Date Title
US4392150A (en) MOS Integrated circuit having refractory metal or metal silicide interconnect layer
US5373192A (en) Electromigration resistance metal interconnect
JPS6336566A (ja) 半導体装置の製造方法
JPS58139468A (ja) 半導体装置およびその製造方法
JP3626773B2 (ja) 半導体デバイスの導電層、ｍｏｓｆｅｔ及びそれらの製造方法
US4615746A (en) Method of forming isolated island regions in a semiconductor substrate by selective etching and oxidation and devices formed therefrom
US4425379A (en) Polycrystalline silicon Schottky diode array
KR900003835B1 (ko) 반도체 장치(半導體裝置)
JP3108447B2 (ja) 半導体装置及びその製造方法
JPS6244854B2 (cg-RX-API-DMAC10.html)
JPS58215055A (ja) 半導体集積回路装置
JPS6150385B2 (cg-RX-API-DMAC10.html)
JPS6230494B2 (cg-RX-API-DMAC10.html)
JPS6113383B2 (cg-RX-API-DMAC10.html)
JPH0324066B2 (cg-RX-API-DMAC10.html)
JPH06196707A (ja) 縦型絶縁ゲート型トランジスタの製法
JP3099450B2 (ja) 半導体装置およびその製造方法
JPS58106847A (ja) 半導体装置の製造方法
JP2556155B2 (ja) 半導体装置の製造方法
JPH05183156A (ja) 半導体装置及びその製造方法
JPS5885529A (ja) 半導体装置の製造方法
JPS5882577A (ja) 金属シリサイドコンタクトを有するポリシリコンダイオ−ド
JPH0213827B2 (cg-RX-API-DMAC10.html)
JPS6114663B2 (cg-RX-API-DMAC10.html)
JPH10256536A (ja) 半導体装置及びその製造方法