JPS6244833B2 - - Google Patents
Info
- Publication number
- JPS6244833B2 JPS6244833B2 JP4503281A JP4503281A JPS6244833B2 JP S6244833 B2 JPS6244833 B2 JP S6244833B2 JP 4503281 A JP4503281 A JP 4503281A JP 4503281 A JP4503281 A JP 4503281A JP S6244833 B2 JPS6244833 B2 JP S6244833B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor layer
- semiconductor
- optical amplification
- layer
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 234
- 230000003321 amplification Effects 0.000 claims description 69
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 69
- 230000003287 optical effect Effects 0.000 claims description 66
- 238000010586 diagram Methods 0.000 description 13
- 230000010355 oscillation Effects 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005316 response function Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
- H01S5/06203—Transistor-type lasers
- H01S5/06206—Controlling the frequency of the radiation, e.g. tunable twin-guide lasers [TTG]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4503281A JPS57160181A (en) | 1981-03-27 | 1981-03-27 | Light amplifying semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4503281A JPS57160181A (en) | 1981-03-27 | 1981-03-27 | Light amplifying semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57160181A JPS57160181A (en) | 1982-10-02 |
| JPS6244833B2 true JPS6244833B2 (enrdf_load_stackoverflow) | 1987-09-22 |
Family
ID=12707993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4503281A Granted JPS57160181A (en) | 1981-03-27 | 1981-03-27 | Light amplifying semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57160181A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6037181A (ja) * | 1983-08-10 | 1985-02-26 | Agency Of Ind Science & Technol | 発光素子 |
| JPS62281381A (ja) * | 1986-05-29 | 1987-12-07 | Mitsubishi Cable Ind Ltd | 光半導体素子 |
-
1981
- 1981-03-27 JP JP4503281A patent/JPS57160181A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57160181A (en) | 1982-10-02 |
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