JPS6244820B2 - - Google Patents

Info

Publication number
JPS6244820B2
JPS6244820B2 JP56105877A JP10587781A JPS6244820B2 JP S6244820 B2 JPS6244820 B2 JP S6244820B2 JP 56105877 A JP56105877 A JP 56105877A JP 10587781 A JP10587781 A JP 10587781A JP S6244820 B2 JPS6244820 B2 JP S6244820B2
Authority
JP
Japan
Prior art keywords
conductivity type
diffusion
regions
well
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56105877A
Other languages
English (en)
Japanese (ja)
Other versions
JPS587880A (ja
Inventor
Keimei Mikoshiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP56105877A priority Critical patent/JPS587880A/ja
Publication of JPS587880A publication Critical patent/JPS587880A/ja
Publication of JPS6244820B2 publication Critical patent/JPS6244820B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
JP56105877A 1981-07-07 1981-07-07 電界効果半導体装置 Granted JPS587880A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56105877A JPS587880A (ja) 1981-07-07 1981-07-07 電界効果半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56105877A JPS587880A (ja) 1981-07-07 1981-07-07 電界効果半導体装置

Publications (2)

Publication Number Publication Date
JPS587880A JPS587880A (ja) 1983-01-17
JPS6244820B2 true JPS6244820B2 (enrdf_load_html_response) 1987-09-22

Family

ID=14419159

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56105877A Granted JPS587880A (ja) 1981-07-07 1981-07-07 電界効果半導体装置

Country Status (1)

Country Link
JP (1) JPS587880A (enrdf_load_html_response)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0356734Y2 (enrdf_load_html_response) * 1985-12-09 1991-12-20
KR100451758B1 (ko) * 1998-11-05 2004-12-17 주식회사 하이닉스반도체 에스오아이(soi)소자테스트용패턴및그형성방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128979A (en) * 1981-02-02 1982-08-10 Jido Keisoku Gijutsu Kenkiyuukumiai Manufacture of junction type field-effect transistor

Also Published As

Publication number Publication date
JPS587880A (ja) 1983-01-17

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